PMST2222,115 NXP Semiconductors, PMST2222,115 Datasheet - Page 4

• Manufacturer Part Number: PMST2222,115
• Description: TRANS NPN 30V 600MA SOT323
• Manufacturer: NXP Semiconductors

Specifications of PMST2222,115

• Package / Case: SC-70-3, SOT-323-3
• Transistor Type: NPN
• Current - Collector (ic) (max): 600mA
• Voltage - Collector Emitter Breakdown (max): 30V
• Vce Saturation (max) @ Ib, Ic: 1.6V @ 50mA, 500mA
• Dc Current Gain (hfe) (min) @ Ic, Vce: 100 @ 150mA, 10V
• Power - Max: 200mW
• Frequency - Transition: 250MHz
• Mounting Type: Surface Mount
• Minimum Operating Temperature: - 65 C
• Configuration: Single
• Transistor Polarity: NPN
• Mounting Style: SMD/SMT
• Collector- Emitter Voltage Vceo Max: 30 V
• Emitter- Base Voltage Vebo: 5 V
• Maximum Dc Collector Current: 0.6 A
• Power Dissipation: 200 mW
• Maximum Operating Frequency: 250 MHz
• Maximum Operating Temperature: + 150 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Current - Collector Cutoff (max): -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: 934035340115; PMST2222 T/R; PMST2222 T/R

NXP Semiconductors
Note
1. Pulse test: t
1999 Apr 22
F
Switching times (between 10% and 90% levels); (see Fig.2)
t
t
t
t
t
t
on
d
r
off
s
f
SYMBOL
NPN switching transistors
V
R1 = 68 Ω; R2 = 325 Ω; R
V
Oscilloscope input impedance Z
handbook, full pagewidth
i
BB
= 9.5 V; T = 500 µs; t
= −3.5 V; V
noise figure
turn-on time
delay time
rise time
turn-off time
storage time
fall time
CC
p
≤ 300 µs; δ ≤ 0.02.
= 29.5 V.
p
= 10 µs; t
B
= 325 Ω; R
PARAMETER
i
= 50 Ω.
r
= t
f
C
≤ 3 ns.
= 160 Ω.
oscilloscope
V i
Fig.2 Test circuit for switching times.
(probe)
450 Ω
R1
I
f = 1 kHz; B = 200 Hz
I
I
C
Con
Boff
R2
= 200 µA; V
= −15 mA
R B
= 150 mA; I
V BB
4
R C
CONDITIONS
V CC
CE
DUT
Bon
= 5 V; R
V o
= 15 mA;
MLB826
(probe)
450 Ω
S
PMST2222; PMST2222A
= 2 kΩ;
oscilloscope
−
−
−
−
−
−
−
MIN.
Product data sheet
4
35
15
20
250
200
60
MAX.
dB
ns
ns
ns
ns
ns
ns
UNIT