BCV27,215 NXP Semiconductors, BCV27,215 Datasheet

TRANS DARL NPN 30V 500MA SOT23

BCV27,215

Manufacturer Part Number
BCV27,215
Description
TRANS DARL NPN 30V 500MA SOT23
Manufacturer
NXP Semiconductors
Datasheet

Specifications of BCV27,215

Package / Case
SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
Mounting Type
Surface Mount
Power - Max
250mW
Current - Collector (ic) (max)
500mA
Voltage - Collector Emitter Breakdown (max)
30V
Transistor Type
NPN - Darlington
Frequency - Transition
220MHz
Dc Current Gain (hfe) (min) @ Ic, Vce
20000 @ 100mA, 5V
Vce Saturation (max) @ Ib, Ic
1V @ 100µA, 100mA
Configuration
Single
Transistor Polarity
NPN
Mounting Style
SMD/SMT
Collector- Emitter Voltage Vceo Max
30 V
Emitter- Base Voltage Vebo
10 V
Collector- Base Voltage Vcbo
40 V
Maximum Dc Collector Current
0.5 A
Maximum Collector Cut-off Current
0.1 uA
Maximum Operating Temperature
+ 150 C
Minimum Operating Temperature
- 65 C
Polarity
NPN
Number Of Elements
1
Collector-emitter Voltage
30V
Collector-base Voltage(max)
40V
Emitter-base Voltage (max)
10V
Base-emitter Saturation Voltage (max)
1.5@0.1mA@100mAV
Collector-emitter Saturation Voltage
1@0.1mA@100mAV
Collector Current (dc) (max)
500mA
Operating Temp Range
-65C to 150C
Operating Temperature Classification
Military
Mounting
Surface Mount
Pin Count
3
Package Type
SST
Dc
1117
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Current - Collector Cutoff (max)
-
Lead Free Status / Rohs Status
Compliant
Other names
933806220215::BCV27 T/R::BCV27 T/R

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
BCV27,215
Manufacturer:
NEXPERIA/安世
Quantity:
20 000
Product data sheet
Supersedes data of 1999 Apr 08
DATA SHEET
BCV27; BCV47
NPN Darlington transistors
DISCRETE SEMICONDUCTORS
2004 Jan 13

Related parts for BCV27,215

BCV27,215 Summary of contents

Page 1

DATA SHEET BCV27; BCV47 NPN Darlington transistors Product data sheet Supersedes data of 1999 Apr 08 DISCRETE SEMICONDUCTORS 2004 Jan 13 ...

Page 2

... NXP Semiconductors NPN Darlington transistors FEATURES • Medium current (max. 500 mA) • Low voltage (max • High DC current gain (min. 20 000). APPLICATIONS • Preamplifier input applications. DESCRIPTION NPN Darlington transistor in a SOT23 plastic package. PNP complements: BCV26 and BCV46. MARKING TYPE NUMBER ...

Page 3

... NXP Semiconductors NPN Darlington transistors LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). SYMBOL PARAMETER V collector-base voltage CBO BCV27 BCV47 V collector-emitter voltage CES BCV27 BCV47 V emitter-base voltage EBO I collector current (DC peak collector current CM I base current B P total power dissipation ...

Page 4

... NXP Semiconductors NPN Darlington transistors CHARACTERISTICS = 25 °C unless otherwise specified. T amb SYMBOL PARAMETER I collector cut-off current CBO BCV27 BCV47 I emitter cut-off current EBO h DC current gain FE BCV27 DC current gain BCV47 V collector-emitter saturation CEsat voltage V base-emitter saturation voltage BEsat V base-emitter on-state voltage ...

Page 5

... NXP Semiconductors NPN Darlington transistors PACKAGE OUTLINE Plastic surface-mounted package; 3 leads DIMENSIONS (mm are the original dimensions UNIT max. 1.1 0.48 0.15 mm 0.1 0.9 0.38 0.09 OUTLINE VERSION IEC SOT23 2004 Jan scale 3.0 1.4 2.5 1.9 0.95 2.8 1.2 2.1 REFERENCES ...

Page 6

... NXP Semiconductors. In case of any inconsistency or conflict between information in this document and such terms and conditions, the latter will prevail. ...

Page 7

... NXP Semiconductors Customer notification This data sheet was changed to reflect the new company name NXP Semiconductors, including new legal definitions and disclaimers. No changes were made to the technical content, except for package outline drawings which were updated to the latest version. Contact information For additional information please visit: http://www ...

Related keywords