BCW61C,215 NXP Semiconductors, BCW61C,215 Datasheet

TRANSISTOR PNP 32V 100MA SOT23

BCW61C,215

Manufacturer Part Number
BCW61C,215
Description
TRANSISTOR PNP 32V 100MA SOT23
Manufacturer
NXP Semiconductors
Datasheet

Specifications of BCW61C,215

Package / Case
SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
Transistor Type
PNP
Current - Collector (ic) (max)
100mA
Voltage - Collector Emitter Breakdown (max)
32V
Vce Saturation (max) @ Ib, Ic
550mV @ 1.25mA, 50mA
Dc Current Gain (hfe) (min) @ Ic, Vce
250 @ 2mA, 5V
Power - Max
250mW
Frequency - Transition
100MHz
Mounting Type
Surface Mount
Minimum Operating Temperature
- 65 C
Configuration
Single
Transistor Polarity
PNP
Mounting Style
SMD/SMT
Collector- Emitter Voltage Vceo Max
32 V
Emitter- Base Voltage Vebo
5 V
Maximum Dc Collector Current
0.2 A
Power Dissipation
250 mW
Maximum Operating Frequency
100 MHz
Maximum Operating Temperature
+ 150 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Current - Collector Cutoff (max)
-
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
Other names
933324140215
BCW61C T/R
BCW61C T/R
Product data sheet
Supersedes data of 1997 May 28
dbook, halfpage
DATA SHEET
BCW61 series
PNP general purpose transistors
DISCRETE SEMICONDUCTORS
M3D088
1999 Apr 12

Related parts for BCW61C,215

BCW61C,215 Summary of contents

Page 1

DATA SHEET dbook, halfpage BCW61 series PNP general purpose transistors Product data sheet Supersedes data of 1997 May 28 DISCRETE SEMICONDUCTORS M3D088 1999 Apr 12 ...

Page 2

... NXP Semiconductors PNP general purpose transistors FEATURES • Low current (max. 100 mA) • Low voltage (max. 32 V). APPLICATIONS • General purpose switching and amplification. DESCRIPTION PNP transistor in a SOT23 plastic package. NPN complement: BCW60. MARKING TYPE NUMBER BCW61B BCW61C BCW61D Note 1. ∗ ...

Page 3

... NXP Semiconductors PNP general purpose transistors THERMAL CHARACTERISTICS SYMBOL PARAMETER R thermal resistance from junction to ambient th j-a Note 1. Transistor mounted on an FR4 printed-circuit board. CHARACTERISTICS = 25 °C unless otherwise specified. T amb SYMBOL PARAMETER I collector cut-off current CBO I emitter cut-off current EBO h DC current gain ...

Page 4

... NXP Semiconductors PNP general purpose transistors PACKAGE OUTLINE Plastic surface mounted package; 3 leads DIMENSIONS (mm are the original dimensions UNIT max. 1.1 0.48 0.15 mm 0.1 0.9 0.38 0.09 OUTLINE VERSION IEC SOT23 1999 Apr scale 3.0 1.4 2.5 1.9 0.95 2.8 1.2 2 ...

Page 5

... NXP Semiconductors. In case of any inconsistency or conflict between information in this document and such terms and conditions, the latter will prevail. ...

Page 6

... NXP Semiconductors Customer notification This data sheet was changed to reflect the new company name NXP Semiconductors, including new legal definitions and disclaimers. No changes were made to the technical content, except for package outline drawings which were updated to the latest version. Contact information For additional information please visit: http://www ...

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