2PB709ASW,115 NXP Semiconductors, 2PB709ASW,115 Datasheet - Page 6

• Manufacturer Part Number: 2PB709ASW,115
• Description: TRANSISTOR PNP 45V 100MA SC59
• Manufacturer: NXP Semiconductors

Specifications of 2PB709ASW,115

• Package / Case: SC-70-3, SOT-323-3
• Transistor Type: PNP
• Current - Collector (ic) (max): 100mA
• Voltage - Collector Emitter Breakdown (max): 45V
• Vce Saturation (max) @ Ib, Ic: 500mV @ 10mA, 100mA
• Dc Current Gain (hfe) (min) @ Ic, Vce: 290 @ 2mA, 10V
• Power - Max: 200mW
• Frequency - Transition: 80MHz
• Mounting Type: Surface Mount
• Dc Collector/base Gain Hfe Min: 210
• Gain Bandwidth Product Ft: 70 MHz
• Minimum Operating Temperature: - 65 C
• Configuration: Single
• Transistor Polarity: PNP
• Mounting Style: SMD/SMT
• Collector- Emitter Voltage Vceo Max: - 45 V
• Emitter- Base Voltage Vebo: - 6 V
• Continuous Collector Current: - 100 mA
• Maximum Dc Collector Current: - 200 mA
• Power Dissipation: 250 mW
• Maximum Operating Frequency: 80 MHz
• Maximum Operating Temperature: + 150 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Current - Collector Cutoff (max): -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: 2PB709ASW T/R; 2PB709ASW T/R; 934057080115

NXP Semiconductors
8. Package outline
9. Packing information
2PB709ART_1
Product data sheet
Table 8.
The indicated -xxx are the last three digits of the 12NC ordering code.
[1]
Type number
2PB709ART
Fig 7. Package outline SOT23 (TO-236AB)
For further information and the availability of packing methods, see
Packing methods
Package
SOT23
2.5
2.1
Dimensions in mm
Rev. 01 — 19 March 2007
1.4
1.2
Description
4 mm pitch, 8 mm tape and reel
1
3.0
2.8
1.9
45 V, 100 mA PNP general-purpose transistor
3
2
0.48
0.38
0.45
0.15
Section
1.1
0.9
0.15
0.09
[1]
2PB709ART
04-11-04
13.
Packing quantity
3000
-215
© NXP B.V. 2007. All rights reserved.
10000
-235
6 of 10