PMBTA64,215 NXP Semiconductors, PMBTA64,215 Datasheet
PMBTA64,215
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PMBTA64,215 Summary of contents
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DATA SHEET PMBTA64 PNP Darlington transistor Product data sheet Supersedes data of 2002 Nov 07 DISCRETE SEMICONDUCTORS 2004 Jan 22 ...
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... NXP Semiconductors PNP Darlington transistor FEATURES • High current (max. 500 mA) • Low voltage (max • High DC current gain (min. 10 000). APPLICATIONS • High input impedance preamplifiers. DESCRIPTION PNP Darlington transistor in a SOT23 plastic package. NPN complement: PMBTA14. MARKING TYPE NUMBER ...
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... NXP Semiconductors PNP Darlington transistor THERMAL CHARACTERISTICS SYMBOL R thermal resistance from junction to ambient th(j-a) Note 1. Transistor mounted on an FR4 printed-circuit board. CHARACTERISTICS = 25 °C unless otherwise specified SYMBOL PARAMETER I collector cut-off current CBO I emitter cut-off current EBO h DC current gain FE V collector-emitter saturation voltage I ...
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... NXP Semiconductors PNP Darlington transistor PACKAGE OUTLINE Plastic surface-mounted package; 3 leads DIMENSIONS (mm are the original dimensions UNIT max. 1.1 0.48 0.15 mm 0.1 0.9 0.38 0.09 OUTLINE VERSION IEC SOT23 2004 Jan scale 3.0 1.4 2.5 1.9 0.95 2.8 1.2 2.1 REFERENCES ...
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... NXP Semiconductors. In case of any inconsistency or conflict between information in this document and such terms and conditions, the latter will prevail. ...
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... NXP Semiconductors Customer notification This data sheet was changed to reflect the new company name NXP Semiconductors, including new legal definitions and disclaimers. No changes were made to the technical content, except for package outline drawings which were updated to the latest version. Contact information For additional information please visit: http://www ...