2PA1774SM,315 NXP Semiconductors, 2PA1774SM,315 Datasheet

TRANSISTOR PNP 50V 150MA SC101

2PA1774SM,315

Manufacturer Part Number
2PA1774SM,315
Description
TRANSISTOR PNP 50V 150MA SC101
Manufacturer
NXP Semiconductors
Datasheet

Specifications of 2PA1774SM,315

Package / Case
SC-101, SOT-883
Transistor Type
PNP
Current - Collector (ic) (max)
100mA
Voltage - Collector Emitter Breakdown (max)
40V
Vce Saturation (max) @ Ib, Ic
200mV @ 5mA, 50mA
Dc Current Gain (hfe) (min) @ Ic, Vce
270 @ 1mA, 6V
Power - Max
430mW
Frequency - Transition
100MHz
Mounting Type
Surface Mount
Dc Collector/base Gain Hfe Min
270 at 1 mA at 6 V
Minimum Operating Temperature
- 65 C
Configuration
Single
Transistor Polarity
PNP
Mounting Style
SMD/SMT
Collector- Emitter Voltage Vceo Max
40 V
Emitter- Base Voltage Vebo
5 V
Maximum Dc Collector Current
0.1 A
Power Dissipation
430 mW
Maximum Operating Frequency
100 MHz
Maximum Operating Temperature
+ 150 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Current - Collector Cutoff (max)
-
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
Other names
2PA1774SM T/R
2PA1774SM T/R
934057144315
DISCRETE SEMICONDUCTORS
DATA SHEET
M3D883
BOTTOM VIEW
2PA1774M series
PNP general purpose transistor
Product data sheet
2004 Feb 19

Related parts for 2PA1774SM,315

2PA1774SM,315 Summary of contents

Page 1

DATA SHEET M3D883 BOTTOM VIEW 2PA1774M series PNP general purpose transistor Product data sheet DISCRETE SEMICONDUCTORS 2004 Feb 19 ...

Page 2

... NXP Semiconductors PNP general purpose transistor FEATURES • Leadless ultra small plastic package (1 mm × 0.6 mm × 0.5 mm) • Board space 1.3 mm × 0.9 mm • Power dissipation comparable to SOT23. APPLICATIONS • General purpose small signal DC • Low and medium frequency AC applications • ...

Page 3

... NXP Semiconductors PNP general purpose transistor LIMITING VALUES In accordance with the Absolute Maximum System (IEC 60134). SYMBOL PARAMETER V collector-base voltage CBO V collector-emitter voltage CEO V emitter-base voltage EBO I collector current (DC peak collector current CM I peak base current BM P total power dissipation tot ...

Page 4

... NXP Semiconductors PNP general purpose transistor CHARACTERISTICS = 25 °C unless otherwise specified. T amb SYMBOL PARAMETER I collector-base cut-off current CBO I emitter-base cut-off current EBO h DC current gain FE 2PA1774QM 2PA1774RM 2PA1774SM V collector-emitter saturation voltage CEsat C collector capacitance c f transition frequency T Note ≤ 300 μs; δ ≤ 0.02. ...

Page 5

... NXP Semiconductors PNP general purpose transistor −10 3 handbook, halfpage V CEsat (mV) −10 2 (1) (2) (3) −10 −1 −10 −1 − 10 150 °C. (1) T amb = 25 °C. (2) T amb = −55 °C. (3) T amb Fig.4 Collector-emitter saturation voltage as a function of collector current; typical values. −0.2 handbook, halfpage ...

Page 6

... NXP Semiconductors PNP general purpose transistor PACKAGE OUTLINE Leadless ultra small plastic package; 3 solder lands; body 1.0 x 0 DIMENSIONS (mm are the original dimensions) A (1) 1 UNIT max. 0.50 0.20 0.55 mm 0.03 0.46 0.12 0.47 Note 1. Including plating thickness OUTLINE VERSION IEC ...

Page 7

... NXP Semiconductors. In case of any inconsistency or conflict between information in this document and such terms and conditions, the latter will prevail. ...

Page 8

... NXP Semiconductors Customer notification This data sheet was changed to reflect the new company name NXP Semiconductors. No changes were made to the content, except for the legal definitions and disclaimers. Contact information For additional information please visit: http://www.nxp.com For sales offices addresses send e-mail to: salesaddresses@nxp.com © ...

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