BCP52,135 NXP Semiconductors, BCP52,135 Datasheet - Page 6

TRANSISTOR PNP 60V 1A SOT223

BCP52,135

Manufacturer Part Number
BCP52,135
Description
TRANSISTOR PNP 60V 1A SOT223
Manufacturer
NXP Semiconductors
Datasheet

Specifications of BCP52,135

Package / Case
SOT-223 (3 leads + Tab), SC-73, TO-261
Mounting Type
Surface Mount
Power - Max
1W
Current - Collector (ic) (max)
1A
Voltage - Collector Emitter Breakdown (max)
60V
Transistor Type
PNP
Frequency - Transition
145MHz
Dc Current Gain (hfe) (min) @ Ic, Vce
63 @ 150mA, 2V
Vce Saturation (max) @ Ib, Ic
500mV @ 50mA, 500mA
Dc Collector/base Gain Hfe Min
40
Gain Bandwidth Product Ft
145 MHz
Minimum Operating Temperature
- 65 C
Configuration
Single
Transistor Polarity
PNP
Mounting Style
SMD/SMT
Collector- Emitter Voltage Vceo Max
- 60 V
Emitter- Base Voltage Vebo
- 5 V
Continuous Collector Current
- 1 A
Maximum Dc Collector Current
- 1.5 A
Power Dissipation
1 W
Maximum Operating Temperature
+ 150 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Current - Collector Cutoff (max)
-
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
Other names
933917300135::BCP52 /T3::BCP52 /T3
NXP Semiconductors
BCP52_BCX52_8
Product data sheet
Fig 5. Transient thermal impedance from junction to ambient as a function of pulse duration for SOT89;
Fig 6. Transient thermal impedance from junction to ambient as a function of pulse duration for SOT89;
Z
Z
(K/W)
(K/W)
th(j-a)
th(j-a)
10
10
10
10
10
10
10
10
1
1
3
2
1
10
3
2
1
10
FR4 PCB, standard footprint
typical values
FR4 PCB, mounting pad for collector 1 cm
typical values
duty cycle =
5
duty cycle =
5
1
0.5
0.2
0.1
0.05
0.02
0.01
0
1
0.5
0.2
0.1
0.05
0.02
0.01
0
0.75
0.33
0.75
0.33
10
10
4
4
10
10
3
3
2
10
10
Rev. 08 — 25 February 2008
2
2
10
10
1
1
1
1
60 V, 1 A PNP medium power transistors
10
10
BCP52; BCX52
10
10
2
2
© NXP B.V. 2008. All rights reserved.
t
t
p
p
006aaa224
006aaa225
(s)
(s)
10
10
3
3
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