PUMH1T/R NXP Semiconductors, PUMH1T/R Datasheet - Page 5

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PUMH1T/R

Manufacturer Part Number
PUMH1T/R
Description
Trans Digital BJT NPN 50V 100mA 6-Pin SOT-363 T/R
Manufacturer
NXP Semiconductors
Type
NPNr
Datasheet

Specifications of PUMH1T/R

Package
6SOT-363
Configuration
Dual
Minimum Dc Current Gain
60@5mA@5V
Peak Dc Collector Current
100 mA
Maximum Collector Emitter Saturation Voltage
0.15@0.5mA@10mA V
Maximum Collector Emitter Voltage
50 V
Maximum Processing Temperature
260 °C
NXP Semiconductors
PACKAGE OUTLINES
2003 Oct 08
Plastic surface mounted package; 6 leads
NPN/NPN resistor-equipped transistors;
R1 = 22 kΩ, R2 = 22 kΩ
DIMENSIONS (mm are the original dimensions)
UNIT
mm
OUTLINE
VERSION
SOT666
0.6
0.5
A
S
0.27
0.17
b
p
pin 1 index
0.18
0.08
c
IEC
Y S
6
1
e 1
1.7
1.5
D
D
e
1.3
1.1
b p
E
5
2
JEDEC
0
1.0
e
REFERENCES
3
4
0.5
e
1
w
A
M
A
1.7
1.5
H
E
scale
EIAJ
1
5
0.3
0.1
L
p
0.1
w
A
0.1
y
2 mm
H E
E
detail X
PROJECTION
EUROPEAN
PEMH1; PUMH1
L p
Product data sheet
c
X
ISSUE DATE
01-01-04
01-08-27
SOT666

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