BCX19T/R NXP Semiconductors, BCX19T/R Datasheet - Page 2

• Manufacturer Part Number: BCX19T/R
• Description: Trans GP BJT NPN 45V 0.5A 3-Pin TO-236AB T/R
• Manufacturer: NXP Semiconductors
• Type: NPNr

Specifications of BCX19T/R

• Package: 3TO-236AB
• Supplier Package: TO-236AB
• Pin Count: 3
• Minimum Dc Current Gain: 100@100mA@1V|70@300mA@1V|40@500mA@1V
• Maximum Operating Frequency: 100(Min) MHz
• Maximum Dc Collector Current: 0.5 A
• Maximum Collector Emitter Saturation Voltage: 0.62@50mA@500mA V
• Maximum Collector Base Voltage: 50 V
• Maximum Collector Emitter Voltage: 45 V
• Maximum Emitter Base Voltage: 5 V

NXP Semiconductors
FEATURES
• High current (500 mA)
• Low voltage (45 V).
APPLICATIONS
• General purpose amplification
• Saturated switching and driver applications.
DESCRIPTION
NPN transistor in a SOT23 plastic package.
PNP complement: BCX17.
MARKING
Note
1. * = p : Made in Hong Kong.
ORDERING INFORMATION
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
Note
1. Transistor mounted on an FR4 printed-circuit board.
2004 Jan 16
BCX19
BCX19
V
V
V
I
I
I
P
T
T
T
C
CM
BM
stg
j
amb
CBO
CEO
EBO
tot
NPN general purpose transistor
NUMBER
SYMBOL
* = t : Made in Malaysia.
* = W : Made in China.
TYPE
TYPE NUMBER
collector-base voltage
collector-emitter voltage
emitter-base voltage
collector current (DC)
peak collector current
peak base current
total power dissipation
storage temperature
junction temperature
operating ambient temperature
NAME
−
PARAMETER
MARKING CODE
plastic surface mounted package; 3 leads
U1*
(1)
2
DESCRIPTION
PINNING
handbook, halfpage
PACKAGE
open emitter
open base; I
open collector
T
Fig.1
amb
PIN
1
2
3
Top view
≤ 25 °C; note 1
CONDITIONS
Simplified outline (SOT23) and symbol.
base
emitter
collector
C
1
= 10 mA
3
DESCRIPTION
2
−
−
−
−
−
−
−
−65
−
−65
MIN.
MAM255
Product data sheet
1
50
45
5
500
1
200
250
+150
150
+150
MAX.
BCX19
VERSION
SOT23
3
2
V
V
V
mA
A
mA
mW
°C
°C
°C
UNIT