BCP56-10,115 NXP Semiconductors, BCP56-10,115 Datasheet - Page 5

• Manufacturer Part Number: BCP56-10,115
• Description: TRANSISTOR NPN 80V 1A SOT223
• Manufacturer: NXP Semiconductors

Specifications of BCP56-10,115

• Package / Case: SOT-223 (3 leads + Tab), SC-73, TO-261
• Transistor Type: NPN
• Current - Collector (ic) (max): 1A
• Voltage - Collector Emitter Breakdown (max): 80V
• Vce Saturation (max) @ Ib, Ic: 500mV @ 50mA, 500mA
• Dc Current Gain (hfe) (min) @ Ic, Vce: 63 @ 150mA, 2V
• Power - Max: 960mW
• Frequency - Transition: 180MHz
• Mounting Type: Surface Mount
• Minimum Operating Temperature: - 65 C
• Configuration: Single Dual Collector
• Transistor Polarity: NPN
• Mounting Style: SMD/SMT
• Collector- Emitter Voltage Vceo Max: 80 V
• Emitter- Base Voltage Vebo: 5 V
• Maximum Dc Collector Current: 1 A
• Power Dissipation: 960 mW
• Maximum Operating Frequency: 180 MHz
• Maximum Operating Temperature: + 150 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Current - Collector Cutoff (max): -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: 933917250115; BCP56-10 T/R; BCP56-10 T/R

NXP Semiconductors
BC639_BCP56_BCX56_8
Product data sheet
Fig 1. Power derating curve SOT54
Fig 3. Power derating curves SOT89
P
(W)
(1) FR4 PCB, mounting pad for collector 6 cm
(2) FR4 PCB, mounting pad for collector 1 cm
(3) FR4 PCB, standard footprint
tot
1.6
1.2
0.8
0.4
0
FR4 PCB, standard footprint
75
25
0
25
75
P
(W)
tot
1.6
1.2
0.8
0.4
0
75
125
T
006aaa085
amb
2
2
( C)
25
175
Rev. 08 — 22 June 2007
(1)
(2)
(3)
0
25
Fig 2. Power derating curves SOT223
75
P
(W)
(1) FR4 PCB, mounting pad for collector 1 cm
(2) FR4 PCB, standard footprint
tot
1.6
1.2
0.8
0.4
BC639; BCP56; BCX56
0
75
125
T
006aaa087
amb
80 V, 1 A NPN medium power transistors
( C)
25
175
(1)
(2)
0
25
75
© NXP B.V. 2007. All rights reserved.
125
T
006aaa086
amb
2
( C)
175
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