BF823,215 NXP Semiconductors, BF823,215 Datasheet - Page 3

• Manufacturer Part Number: BF823,215
• Description: TRANS PNP 250V 50MA SOT23
• Manufacturer: NXP Semiconductors
• Series: -r

Specifications of BF823,215

• Package / Case: SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
• Transistor Type: PNP
• Current - Collector (ic) (max): 50mA
• Voltage - Collector Emitter Breakdown (max): 250V
• Vce Saturation (max) @ Ib, Ic: 800mV @ 5mA, 30mA
• Dc Current Gain (hfe) (min) @ Ic, Vce: 50 @ 25mA, 20V
• Power - Max: 250mW
• Frequency - Transition: 60MHz
• Mounting Type: Surface Mount
• Minimum Operating Temperature: - 65 C
• Configuration: Single
• Transistor Polarity: PNP
• Mounting Style: SMD/SMT
• Collector- Emitter Voltage Vceo Max: 250 V
• Emitter- Base Voltage Vebo: 5 V
• Maximum Dc Collector Current: 0.05 A
• Power Dissipation: 250 mW
• Maximum Operating Frequency: 60 MHz
• Maximum Operating Temperature: + 150 C
• Current - Collector Cutoff (max): -
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Current - Collector Cutoff (max): -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: 933640900215; BF823 T/R; BF823 T/R

NXP Semiconductors
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
Note
1. Transistor mounted on an FR4 printed-circuit board.
THERMAL CHARACTERISTICS
Note
1. Transistor mounted on an FR4 printed-circuit board.
CHARACTERISTICS
T
2004 Jan 16
V
V
V
I
I
I
P
T
T
T
R
I
I
h
V
C
f
j
SYMBOL
C
CM
BM
CBO
EBO
T
SYMBOL
SYMBOL
FE
stg
j
amb
CBO
CEO
EBO
tot
= 25 °C unless otherwise specified.
CEsat
PNP high-voltage transistors
th(j-a)
re
collector-base voltage
collector-emitter voltage
emitter-base voltage
collector current (DC)
peak collector current
peak base current
total power dissipation
storage temperature
junction temperature
operating ambient temperature
thermal resistance from junction to ambient
collector-base cut-off current
emitter-base cut-off current
DC current gain
collector-emitter saturation voltage
feedback capacitance
transition frequency
BF821
BF823
BF821
BF823
PARAMETER
PARAMETER
PARAMETER
I
I
I
I
I
I
I
f = 100 MHz
E
E
C
C
C
C
C
open emitter
open base
open collector
T
3
amb
= 0; V
= 0; V
= 0; V
= −25 mA; V
= −30 mA; I
= I
= −10 mA; V
c
≤ 25 °C; note 1
= 0; V
note 1
CB
CB
EB
CONDITIONS
CONDITIONS
= −200 V
= −200 V; T
= −5 V
CB
CONDITIONS
B
CE
CE
= −30 V; f = 1 MHz −
= −5 mA
= −20 V
= −10 V;
j
= 150 °C
−
−
−
−
−
−
−
−
−
−65
−
−65
−
−
−
50
−
60
BF821; BF823
MIN.
MIN.
VALUE
500
Product data sheet
−300
−250
−300
−250
−5
−50
−100
−50
250
+150
150
+150
−10
−10
−50
−
−800
1.6
−
MAX.
MAX.
UNIT
K/W
V
V
V
V
V
mA
mA
mA
mW
°C
°C
°C
nA
µA
nA
mV
pF
MHz
UNIT
UNIT