BF822,215 NXP Semiconductors, BF822,215 Datasheet - Page 4

• Manufacturer Part Number: BF822,215
• Description: TRANSISTOR NPN 250V 50MA SOT23
• Manufacturer: NXP Semiconductors
• Series: -r

Specifications of BF822,215

• Package / Case: SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
• Transistor Type: NPN
• Current - Collector (ic) (max): 50mA
• Voltage - Collector Emitter Breakdown (max): 250V
• Vce Saturation (max) @ Ib, Ic: 600mV @ 5mA, 30mA
• Dc Current Gain (hfe) (min) @ Ic, Vce: 50 @ 25mA, 20V
• Power - Max: 250mW
• Frequency - Transition: 60MHz
• Mounting Type: Surface Mount
• Dc Collector/base Gain Hfe Min: 50
• Minimum Operating Temperature: - 65 C
• Configuration: Single
• Transistor Polarity: NPN
• Mounting Style: SMD/SMT
• Collector- Emitter Voltage Vceo Max: 250 V
• Emitter- Base Voltage Vebo: 5 V
• Continuous Collector Current: 50 mA
• Maximum Dc Collector Current: 100 mA
• Power Dissipation: 250 mW
• Maximum Operating Frequency: 60 MHz
• Maximum Operating Temperature: + 150 C
• Current - Collector Cutoff (max): -
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Current - Collector Cutoff (max): -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: 933640890215; BF822 T/R; BF822 T/R

NXP Semiconductors
PACKAGE OUTLINE
2004 Jan 16
NPN high-voltage transistors
Plastic surface-mounted package; 3 leads
DIMENSIONS (mm are the original dimensions)
UNIT
mm
VERSION
OUTLINE
SOT23
1.1
0.9
A
max.
0.1
A
1
1
0.48
0.38
b
p
IEC
e 1
0.15
0.09
c
D
e
3.0
2.8
D
b p
3
TO-236AB
JEDEC
1.4
1.2
E
REFERENCES
0
2
1.9
e
w
B
0.95
M
e
1
JEITA
scale
B
1
4
2.5
2.1
H
E
0.45
0.15
L
p
A
2 mm
A 1
0.55
0.45
Q
H E
0.2
E
v
detail X
PROJECTION
0.1
EUROPEAN
w
L p
A
Q
BF820; BF822
c
X
Product data sheet
v
ISSUE DATE
M
04-11-04
06-03-16
A
SOT23