BF840,215 NXP Semiconductors, BF840,215 Datasheet - Page 3

• Manufacturer Part Number: BF840,215
• Description: TRANS NPN 40V 25MA SOT23
• Manufacturer: NXP Semiconductors

Specifications of BF840,215

• Package / Case: SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
• Mounting Type: Surface Mount
• Power - Max: 250mW
• Current - Collector (ic) (max): 25mA
• Voltage - Collector Emitter Breakdown (max): 40V
• Transistor Type: NPN
• Frequency - Transition: 380MHz
• Dc Current Gain (hfe) (min) @ Ic, Vce: 67 @ 1mA, 10V
• Dc Collector/base Gain Hfe Min: 67
• Minimum Operating Temperature: - 65 C
• Configuration: Single
• Transistor Polarity: NPN
• Mounting Style: SMD/SMT
• Collector- Emitter Voltage Vceo Max: 40 V
• Emitter- Base Voltage Vebo: 4 V
• Continuous Collector Current: 25 mA
• Maximum Dc Collector Current: 25 mA
• Power Dissipation: 250 mW
• Maximum Operating Frequency: 380 MHz
• Maximum Operating Temperature: + 150 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Current - Collector Cutoff (max): -
• Vce Saturation (max) @ Ib, Ic: -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: 933792670215::BF840 T/R::BF840 T/R

NXP Semiconductors
THERMAL CHARACTERISTICS
Note
1. Transistor mounted on an FR4 printed-circuit board.
CHARACTERISTICS
T
2004 Jan 13
R
I
I
h
V
C
f
j
CBO
EBO
T
SYMBOL
SYMBOL
FE
= 25 °C unless otherwise specified.
BE
NPN medium frequency transistor
th(j-a)
re
thermal resistance from junction to ambient
collector cut-off current
emitter cut-off current
DC current gain
base-emitter voltage
feedback capacitance
transition frequency
PARAMETER
PARAMETER
I
I
I
I
I
I
E
C
C
C
C
C
= 0; V
= 0; V
= 1 mA; V
= 1 mA; V
= 0; V
= 1 mA; V
CB
EB
CB
= 20 V
= 4 V
= 10 V; f = 1 MHz
CONDITIONS
CE
CE
CE
= 10 V
= 10 V
= 10 V; f = 100 MHz
3
note 1
CONDITIONS
−
−
67
675
−
−
MIN.
VALUE
500
−
−
−
725
0.3
380
TYP.
Product data sheet
100
100
222
775
−
−
MAX.
BF840
UNIT
K/W
nA
nA
mV
pF
MHz
UNIT