BC848BWT106 Rohm Semiconductor, BC848BWT106 Datasheet - Page 2

TRANS NPN 30V 1MA SOT-323 TR

BC848BWT106

Manufacturer Part Number
BC848BWT106
Description
TRANS NPN 30V 1MA SOT-323 TR
Manufacturer
Rohm Semiconductor
Datasheet

Specifications of BC848BWT106

Transistor Type
NPN
Current - Collector (ic) (max)
100mA
Voltage - Collector Emitter Breakdown (max)
30V
Vce Saturation (max) @ Ib, Ic
600mV @ 5mA, 100mA
Dc Current Gain (hfe) (min) @ Ic, Vce
200 @ 2mA, 5V
Power - Max
200mW
Frequency - Transition
200MHz
Mounting Type
Surface Mount
Package / Case
SC-70-3, SOT-323-3
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Current - Collector Cutoff (max)
-

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
BC848BWT106
Manufacturer:
SAMSUNG
Quantity:
3 123
Transistors
1000
1000
Basic ordering unit (pieces)
100
100
Packaging specifications
Electrical characteristic curves
100
10
10
80
60
40
20
0
0.1
0.1
Fig.1 Grounded emitter output
0
V
Ta=25°C
CE
Packaging type
−COLLECTOR-EMITTER VOLTAGE (V)
characteristics ( )
Ta=25°C
Part No.
Marking
Ta=125°C
Code
Ta=−55°C
Fig.4 DC current gain vs. collector current ( )
Fig.3 DC current gain vs. collector current ( )
0.1
1.0
1.0
1.0
I
B
=0mA
I
I
C
C
-COLLECTOR CURRENT (mA)
-COLLECTOR CURRENT (mA)
BC848BW
UMT3
T106
3000
G1K
2.0
10
10
10.0
8.0
6.0
4.0
2.0
0
Fig.2 Grounded emitter output
0
V
BC848B
CE
SST3
T116
3000
G1K
-COLLECTOR-EMITTER VOLTAGE (V)
100
100
characteristics ( )
1V
V
CE
=10V
5V
Ta=25°C
1.0
V
CE
35
30
25
20
15
10
5
=5V
I
1000
B
1000
=0µA
Ta=25°C
2.0
BC848BW / BC848B
Rev.A
2/5

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