2SC3837KT146N Rohm Semiconductor, 2SC3837KT146N Datasheet - Page 2

• Manufacturer Part Number: 2SC3837KT146N
• Description: TRANS NPN 20V 50MA SOT-346 TR
• Manufacturer: Rohm Semiconductor

Specifications of 2SC3837KT146N

• Transistor Type: NPN
• Current - Collector (ic) (max): 50mA
• Voltage - Collector Emitter Breakdown (max): 20V
• Vce Saturation (max) @ Ib, Ic: 500mV @ 4mA, 20mA
• Dc Current Gain (hfe) (min) @ Ic, Vce: 82 @ 10mA, 10V
• Power - Max: 200mW
• Frequency - Transition: 1.5GHz
• Mounting Type: Surface Mount
• Package / Case: SC-59-3, SMT3, SOT-346, TO-236
• Npn: Transistor Polarity
• Collector Emitter Voltage V(br)ceo: 18V
• Power Dissipation Pd: 200mW
• Dc Collector Current: 20mA
• Operating Temperature Range: -55°C To +150°C
• Transistor Case Style: SOT-346
• No. Of Pins: 3
• Transistor Polarity: NPN
• Dc Current Gain Hfe: 56
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Current - Collector Cutoff (max): -
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant

Electrical characteristic curves
Fig.4 Gain bandwidth product vs. emitter current
○
2SC5661 / 2SC4725 / 2SC4082 / 2SC3837K
c
www.rohm.com
Fig.1 DC current gain vs. collector current
Fig.7 Insertion gain vs. collector current
500
200
100
2009 ROHM Co., Ltd. All rights reserved.
25
20
15
10
50
20
10
5000
2000
1000
5
0
500
200
100
0.5
0.1 0.2
−0.1 −0.2
COLLECTOR CURRENT : Ic (mA)
1
COLLECTOR CURRENT : I
EMITTER CURRENT : I
0.5
−0.5 −1 −2
2
1
2
5
10
5
−5 −10 −20
Ta=25°C
V
f=200MHz
10 20
CE
E
20
Ta=25°C
V
C
(mA)
=12V
Ta=25°C
V
CE
(mA)
CE
=10V
=10V
50
50
−50
Fig.2 Collector-emitter saturation voltage
Fig.8 Insertion gain vs. collector voltage
500
200
100
50
20
10
30
25
20
15
10
5
0
COLLECTOR TO EMITTER VOLTAGE : V
0.1 0.2
0
Fig.5 Collector to base time constance
50
20
10
vs. collector current
5
2
1
0.1 0.2
COLLECTOR CURRENT : I
2
vs. collector current
COLLECTOR CURRENT : I
0.5
0.5
4
2/3
1
1
2
6
2
5
8
5
Ta=25°C
I
f=200MHz
10 20
C
=2mA
Ta=25°C
I
C
C
(mA)
Ta=25°C
V
f=31.8MHz
10 20
/I
10
B
CE
C
=5
(mA)
=10V
CE
12
(V)
50
50
Fig.3 Capacitance vs. reverse bias voltage
5.0
2.0
1.0
0.5
0.2
0.1
Fig.9 Noise factor vs. collector current
0.1 0.2
25
20
15
10
20
10
5
0
0
0.1
0.1 0.2
COLLECTOR TO BASE VOLTAGE : V
Fig.6 Insertion gain vs. frequency
0.2
COLLECTOR CURRENT : I
0.5
0.5
FREQUENCY : f (GHz)
2009.12 - Rev.C
0.5
1
1
2
2
Data Sheet
1
5
2
5
Cre
Cob
10 20
Ta=25°C
V
I
Ta=25°C
f=1MHz
I
Ta=25°C
V
f=200MHz
10 20
C
E
CE
=10mA
=0A
CE
C
=10V
(mA)
=12V
5
CB
(V)
50
10
50