BC869-16,115 NXP Semiconductors, BC869-16,115 Datasheet - Page 5

TRANSISTOR PNP 20V 1A SOT89

BC869-16,115

Manufacturer Part Number
BC869-16,115
Description
TRANSISTOR PNP 20V 1A SOT89
Manufacturer
NXP Semiconductors
Datasheet

Specifications of BC869-16,115

Package / Case
SC-62, SOT-89, TO-243 (3 Leads + Tab)
Transistor Type
PNP
Current - Collector (ic) (max)
1A
Voltage - Collector Emitter Breakdown (max)
20V
Vce Saturation (max) @ Ib, Ic
500mV @ 100mA, 1A
Dc Current Gain (hfe) (min) @ Ic, Vce
100 @ 500mA, 1V
Power - Max
1.2W
Frequency - Transition
140MHz
Mounting Type
Surface Mount
Minimum Operating Temperature
- 65 C
Configuration
Single Dual Collector
Transistor Polarity
PNP
Mounting Style
SMD/SMT
Collector- Emitter Voltage Vceo Max
20 V
Emitter- Base Voltage Vebo
5 V
Maximum Dc Collector Current
1 A
Power Dissipation
1200 mW
Maximum Operating Frequency
140 MHz
Maximum Operating Temperature
+ 150 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Current - Collector Cutoff (max)
-
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
Other names
934011130115
BC869-16 T/R
BC869-16 T/R
NXP Semiconductors
2004 Nov 08
handbook, full pagewidth
PNP medium power transistor;
20 V, 1 A
Mounted on FR4 printed-circuit board; mounting pad for collector 1 cm
(1) δ = 1.
(2) δ = 0.75.
Fig.3
(K/W)
Z th
10
10
10
10
−1
10
2.8 mm
1
1.8 mm
3
2
−5
SOT89 standard mounting conditions for
reflow soldering.
(10)
(1)
(2)
(3)
(4)
(5)
(6)
(7)
(8)
(9)
mm
1.1
10
Fig.2 Transient thermal impedance as a function of pulse time; typical values.
(3) δ = 0.5.
(4) δ = 0.33.
0.7 mm
−4
3.7 mm
2 mm
10
0.8 mm
−3
MLE321
(5) δ = 0.2.
(6) δ = 0.1.
3.5 mm
10
−2
2
(7) δ = 0.05.
(8) δ = 0.02.
.
10
5
−1
handbook, halfpage
Fig.4
40 mm
1
Printed-circuit board for SOT89; mounting
pad for collector 1 cm
(9) δ = 0.01.
(10) δ = 0.
3.96 mm
0.5 mm
2.5 mm
10
32 mm
10 mm
P
t p
2
10
.
10 mm
1 mm
T
2
1.6 mm
MLE322
Product data sheet
δ
t p (s)
=
t p
T
MLE324
t
BC869
5 mm
10
3

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