PBSS5240Y,115 NXP Semiconductors, PBSS5240Y,115 Datasheet - Page 5

TRANS PNP 40V 3A SOT363

PBSS5240Y,115

Manufacturer Part Number
PBSS5240Y,115
Description
TRANS PNP 40V 3A SOT363
Manufacturer
NXP Semiconductors
Series
-r
Datasheet

Specifications of PBSS5240Y,115

Package / Case
SC-70-6, SC-88, SOT-363
Transistor Type
PNP
Current - Collector (ic) (max)
2A
Voltage - Collector Emitter Breakdown (max)
40V
Vce Saturation (max) @ Ib, Ic
350mV @ 200mA, 2A
Dc Current Gain (hfe) (min) @ Ic, Vce
210 @ 1A, 2V
Power - Max
430mW
Frequency - Transition
100MHz
Mounting Type
Surface Mount
Minimum Operating Temperature
- 65 C
Configuration
Single Quad Collector
Transistor Polarity
PNP
Mounting Style
SMD/SMT
Collector- Emitter Voltage Vceo Max
40 V
Emitter- Base Voltage Vebo
5 V
Maximum Dc Collector Current
2 A
Power Dissipation
430 mW
Maximum Operating Frequency
100 MHz
Maximum Operating Temperature
+ 150 C
Current - Collector Cutoff (max)
-
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Current - Collector Cutoff (max)
-
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
Other names
934056512115
PBSS5240Y T/R
PBSS5240Y T/R
NXP Semiconductors
PACKAGE OUTLINE
2002 Feb 28
Plastic surface mounted package; 6 leads
40 V low V
DIMENSIONS (mm are the original dimensions)
UNIT
mm
VERSION
OUTLINE
SOT363
1.1
0.8
A
max
0.1
A 1
CEsat
1
6
0.30
0.20
b p
y
IEC
PNP transistor
pin 1
index
e 1
0.25
0.10
c
D
e
2
5
2.2
1.8
b p
D
JEDEC
1.35
1.15
E
4
3
REFERENCES
0
1.3
e
w
B
M
B
0.65
e
1
SC-88
scale
EIAJ
5
1
H E
2.2
2.0
A
0.45
0.15
L p
A 1
2 mm
0.25
0.15
Q
H E
E
0.2
v
detail X
PROJECTION
0.2
EUROPEAN
w
L p
Q
0.1
A
y
c
PBSS5240Y
Product data sheet
X
v
ISSUE DATE
M
97-02-28
A
SOT363

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