PBSS4250X,135 NXP Semiconductors, PBSS4250X,135 Datasheet - Page 5

• Manufacturer Part Number: PBSS4250X,135
• Description: TRANS NPN 50V 2A SOT89
• Manufacturer: NXP Semiconductors
• Series: -r

Specifications of PBSS4250X,135

• Package / Case: SC-62, SOT-89, TO-243 (3 Leads + Tab)
• Transistor Type: NPN
• Current - Collector (ic) (max): 2A
• Voltage - Collector Emitter Breakdown (max): 50V
• Vce Saturation (max) @ Ib, Ic: 320mV @ 200mA, 2A
• Current - Collector Cutoff (max): 100nA
• Dc Current Gain (hfe) (min) @ Ic, Vce: 300 @ 1A, 2V
• Power - Max: 1W
• Frequency - Transition: 100MHz
• Mounting Type: Surface Mount
• Dc Collector/base Gain Hfe Min: 300
• Minimum Operating Temperature: - 65 C
• Configuration: Single
• Transistor Polarity: NPN
• Mounting Style: SMD/SMT
• Collector- Emitter Voltage Vceo Max: 50 V
• Emitter- Base Voltage Vebo: 5 V
• Continuous Collector Current: 2 A
• Maximum Dc Collector Current: 5 A
• Power Dissipation: 550 mW
• Maximum Operating Frequency: 100 MHz
• Maximum Operating Temperature: + 150 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 934057967135; PBSS4250X /T3; PBSS4250X /T3

NXP Semiconductors
2004 Nov 08
50 V, 2 A
NPN low V
Mounted on FR4 printed-circuit board; mounting pad for collector 6 cm
Z
(K/W)
th(j-a)
10
10
10
10
−1
1
3
2
10
−5
duty cycle =
1.00
0.75
0.50
0.33
0.20
0.10
0.05
0.02
0.01
0
CEsat
Fig.4 Transient thermal impedance as a function of pulse time; typical values.
10
−4
(BISS) transistor
10
−3
10
−2
2
.
10
5
−1
1
10
10
2
PBSS4250X
Product data sheet
t
p
006aaa245
(s)
10
3