BSP51,115 NXP Semiconductors, BSP51,115 Datasheet - Page 2
![TRANS NPN 80V 1000MA SOT223](/photos/1/39/13965/568-sot-223_sc-73_sot223-1_sml.jpg)
BSP51,115
Manufacturer Part Number
BSP51,115
Description
TRANS NPN 80V 1000MA SOT223
Manufacturer
NXP Semiconductors
Series
-r
Datasheet
1.BSP51115.pdf
(7 pages)
Specifications of BSP51,115
Package / Case
SOT-223 (3 leads + Tab), SC-73, TO-261
Transistor Type
NPN - Darlington
Current - Collector (ic) (max)
1A
Voltage - Collector Emitter Breakdown (max)
60V
Vce Saturation (max) @ Ib, Ic
1.3V @ 500µA, 500mA
Current - Collector Cutoff (max)
50nA
Dc Current Gain (hfe) (min) @ Ic, Vce
2000 @ 500mA, 10V
Power - Max
1.25W
Frequency - Transition
200MHz
Mounting Type
Surface Mount
Configuration
Single
Transistor Polarity
NPN
Mounting Style
SMD/SMT
Collector- Emitter Voltage Vceo Max
60 V
Emitter- Base Voltage Vebo
5 V
Collector- Base Voltage Vcbo
80 V
Maximum Dc Collector Current
1 A
Maximum Collector Cut-off Current
0.05 uA
Power Dissipation
1.25 W
Maximum Operating Temperature
+ 150 C
Continuous Collector Current
1 A
Dc Collector/base Gain Hfe Min
1000
Minimum Operating Temperature
- 65 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
933986340115
BSP51 T/R
BSP51 T/R
BSP51 T/R
BSP51 T/R
NXP Semiconductors
FEATURES
• High current (max. 1 A)
• Low voltage (max. 80 V)
• Integrated diode and resistor.
APPLICATIONS
• Industrial high gain amplification.
DESCRIPTION
NPN Darlington transistor in a SOT223 plastic package.
PNP complements: BSP60, BSP61 and BSP62.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
Note
1. Device mounted on a printed-circuit board, single sided copper, tinplated, mounting pad for collector 1 cm
1999 Apr 23
V
V
V
I
I
I
P
T
T
T
C
CM
B
SYMBOL
stg
j
amb
CBO
CES
EBO
tot
NPN Darlington transistors
For other mounting conditions, see “Thermal considerations for the SOT223 in the General Part of associated
Handbook”.
collector-base voltage
collector-emitter voltage
emitter-base voltage
collector current (DC)
peak collector current
base current (DC)
total power dissipation
storage temperature
junction temperature
operating ambient temperature
BSP50
BSP51
BSP52
BSP50
BSP51
BSP52
PARAMETER
2
PINNING
open emitter
V
open collector
T
amb
BE
Top view
PIN
2,4
CONDITIONS
Fig.1 Simplified outline (SOT223) and symbol.
1
3
= 0
≤ 25 °C; note 1 −
1
base
collector
emitter
2
4
BSP50; BSP51; BSP52
3
MAM265
−
−
−
−
−
−
−
−
−
−
−65
−
−65
MIN.
DESCRIPTION
1
60
80
90
45
60
80
5
1
2
100
1.25
+150
150
+150
Product data sheet
MAX.
3
V
V
V
V
V
V
V
A
A
mA
W
°C
°C
°C
2
.
UNIT
2, 4