BSP51,115 NXP Semiconductors, BSP51,115 Datasheet - Page 5
![TRANS NPN 80V 1000MA SOT223](/photos/1/39/13965/568-sot-223_sc-73_sot223-1_sml.jpg)
BSP51,115
Manufacturer Part Number
BSP51,115
Description
TRANS NPN 80V 1000MA SOT223
Manufacturer
NXP Semiconductors
Series
-r
Datasheet
1.BSP51115.pdf
(7 pages)
Specifications of BSP51,115
Package / Case
SOT-223 (3 leads + Tab), SC-73, TO-261
Transistor Type
NPN - Darlington
Current - Collector (ic) (max)
1A
Voltage - Collector Emitter Breakdown (max)
60V
Vce Saturation (max) @ Ib, Ic
1.3V @ 500µA, 500mA
Current - Collector Cutoff (max)
50nA
Dc Current Gain (hfe) (min) @ Ic, Vce
2000 @ 500mA, 10V
Power - Max
1.25W
Frequency - Transition
200MHz
Mounting Type
Surface Mount
Configuration
Single
Transistor Polarity
NPN
Mounting Style
SMD/SMT
Collector- Emitter Voltage Vceo Max
60 V
Emitter- Base Voltage Vebo
5 V
Collector- Base Voltage Vcbo
80 V
Maximum Dc Collector Current
1 A
Maximum Collector Cut-off Current
0.05 uA
Power Dissipation
1.25 W
Maximum Operating Temperature
+ 150 C
Continuous Collector Current
1 A
Dc Collector/base Gain Hfe Min
1000
Minimum Operating Temperature
- 65 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
933986340115
BSP51 T/R
BSP51 T/R
BSP51 T/R
BSP51 T/R
NXP Semiconductors
PACKAGE OUTLINE
1999 Apr 23
Plastic surface mounted package; collector pad for good heat transfer; 4 leads
NPN Darlington transistors
DIMENSIONS (mm are the original dimensions)
UNIT
mm
VERSION
OUTLINE
SOT223
1.8
1.5
A
0.10
0.01
A
1
1
y
0.80
0.60
b
p
IEC
e
3.1
2.9
1
b
1
b
0.32
0.22
D
e
1
c
2
b
6.7
6.3
D
p
JEDEC
4
3.7
3.3
E
REFERENCES
3
0
4.6
e
w
B
M
2.3
e
SC-73
B
scale
1
EIAJ
5
2
c
7.3
6.7
H
E
A
4 mm
1.1
0.7
L
1
p
0.95
0.85
Q
0.2
v
H
E
BSP50; BSP51; BSP52
E
detail X
0.1
w
PROJECTION
EUROPEAN
0.1
y
A
L
p
Q
Product data sheet
X
ISSUE DATE
97-02-28
99-09-13
v
A
M
A
SOT223