PBSS5480X,135 NXP Semiconductors, PBSS5480X,135 Datasheet - Page 7

• Manufacturer Part Number: PBSS5480X,135
• Description: TRANS NPN 80V 4A SOT89
• Manufacturer: NXP Semiconductors
• Series: -r

Specifications of PBSS5480X,135

• Package / Case: SC-62, SOT-89, TO-243 (3 Leads + Tab)
• Transistor Type: PNP
• Current - Collector (ic) (max): 4A
• Voltage - Collector Emitter Breakdown (max): 80V
• Vce Saturation (max) @ Ib, Ic: 380mV @ 500mA, 5A
• Current - Collector Cutoff (max): 100nA
• Dc Current Gain (hfe) (min) @ Ic, Vce: 150 @ 2A, 2V
• Power - Max: 1.6W
• Frequency - Transition: 125MHz
• Mounting Type: Surface Mount
• Minimum Operating Temperature: - 65 C
• Configuration: Single
• Transistor Polarity: PNP
• Mounting Style: SMD/SMT
• Collector- Emitter Voltage Vceo Max: 80 V
• Emitter- Base Voltage Vebo: 5 V
• Maximum Dc Collector Current: 4 A
• Power Dissipation: 2500 mW
• Maximum Operating Frequency: 125 MHz
• Maximum Operating Temperature: + 150 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 934058211135; PBSS5480X /T3; PBSS5480X /T3

NXP Semiconductors
CHARACTERISTICS
T
Note
1. Pulse test: t
2004 Oct 25
I
I
I
h
V
R
V
V
f
C
amb
CBO
CES
EBO
T
SYMBOL
FE
CEsat
BEsat
BEon
80 V, 4 A
NPN low V
CEsat
c
= 25 °C unless otherwise specified.
collector-base cut-off current
collector-emitter cut-off current
emitter-base cut-off current
DC current gain
collector-emitter saturation
voltage
equivalent on-resistance
base-emitter saturation voltage
base-emitter turn-on voltage
transition frequency
collector capacitance
p
≤ 300 μs; δ ≤ 0.02.
CEsat
PARAMETER
(BISS) transistor
V
V
T
V
V
V
V
V
V
I
I
I
I
note 1
I
note 1
I
note 1
I
I
I
note 1
I
note 1
I
I
f = 100 MHz
I
f = 1 MHz
C
C
C
C
C
C
C
C
C
C
C
C
E
j
CB
CB
CE
EB
CE
CE
CE
CE
= 150 °C
= 0.5 A; I
= 1 A; I
= 2 A; I
= 4 A; I
= 5 A; I
= 5 A; I
= 0.5 A; I
= 1 A; I
= 1 A; I
= 4 A; I
= 2 A; V
= 100 mA; V
= i
= 5 V; I
= 80 V; I
= 80 V; I
= 80 V; V
= 2 V; I
= 2 V; I
= 2 V; I
= 2 V; I
e
CONDITIONS
= 0 A; V
B
B
B
B
B
B
B
B
7
CE
C
= 50 mA
= 40 mA
= 200 mA;
= 500 mA;
= 500 mA;
= 50 mA
= 100 mA;
= 400 mA;
C
C
C
C
B
B
E
E
= 0 A
= 50 mA
= 50 mA
= 0.5 A
= 1 A; note 1 250
= 2 A; note 1 175
= 4 A; note 1 80
= 2 V
BE
CB
= 0 A
= 0 A;
CE
= 0 V
= 10 V;
= 10 V;
−
−
−
−
250
−
−
−
−
−
−
−
−
−
−
−
120
−
MIN.
−
−
−
−
400
400
270
140
25
55
110
170
200
40
0.78
0.79
0.82
0.95
0.78
150
35
TYP.
PBSS4480X
100
50
100
100
−
−
−
−
40
80
160
230
270
54
0.85
0.9
0.95
1.05
0.85
−
50
Product data sheet
MAX.
nA
μA
nA
nA
−
−
−
−
mV
mV
mV
mV
mV
mΩ
V
V
V
V
V
MHz
pF
UNIT