BCV28,115 NXP Semiconductors, BCV28,115 Datasheet

TRANS DARL PNP 30V 500MA SOT89

BCV28,115

Manufacturer Part Number
BCV28,115
Description
TRANS DARL PNP 30V 500MA SOT89
Manufacturer
NXP Semiconductors
Series
-r
Datasheet

Specifications of BCV28,115

Package / Case
SC-62, SOT-89, TO-243 (3 Leads + Tab)
Transistor Type
PNP - Darlington
Current - Collector (ic) (max)
500mA
Voltage - Collector Emitter Breakdown (max)
30V
Vce Saturation (max) @ Ib, Ic
1V @ 100µA, 100mA
Dc Current Gain (hfe) (min) @ Ic, Vce
20000 @ 100mA, 5V
Power - Max
1.3W
Frequency - Transition
220MHz
Mounting Type
Surface Mount
Configuration
Single
Transistor Polarity
PNP
Mounting Style
SMD/SMT
Collector- Emitter Voltage Vceo Max
30 V
Emitter- Base Voltage Vebo
10 V
Collector- Base Voltage Vcbo
40 V
Maximum Dc Collector Current
0.5 A
Maximum Collector Cut-off Current
0.1 uA
Maximum Operating Temperature
+ 150 C
Minimum Operating Temperature
- 65 C
Current - Collector Cutoff (max)
-
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Current - Collector Cutoff (max)
-
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
Other names
933871580115
BCV28 T/R
BCV28 T/R
Product data sheet
Supersedes data of 1999 Apr 08
dbook, halfpage
DATA SHEET
BCV28; BCV48
PNP Darlington transistors
DISCRETE SEMICONDUCTORS
M3D109
2004 Dec 06

Related parts for BCV28,115

BCV28,115 Summary of contents

Page 1

DATA SHEET dbook, halfpage BCV28; BCV48 PNP Darlington transistors Product data sheet Supersedes data of 1999 Apr 08 DISCRETE SEMICONDUCTORS M3D109 2004 Dec 06 ...

Page 2

... NXP Semiconductors PNP Darlington transistors FEATURES • Very high DC current gain (min. 10 000) • High current (max. 500 mA) • Low voltage (max. 60 V). APPLICATIONS • Where very high amplification is required. DESCRIPTION PNP Darlington transistor in a SOT89 plastic package. NPN complements: BCV29 and BCV49. ...

Page 3

... NXP Semiconductors PNP Darlington transistors LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). SYMBOL PARAMETER V collector-base voltage CBO BCV28 BCV48 V collector-emitter voltage CES BCV28 BCV48 V emitter-base voltage EBO I collector current (DC peak collector current CM I base current (DC total power dissipation ...

Page 4

... NXP Semiconductors PNP Darlington transistors CHARACTERISTICS = 25 °C unless otherwise specified. T amb SYMBOL PARAMETER I collector-base cut-off current CBO BCV28 BCV48 I emitter-base cut-off current EBO h DC current gain FE BCV28 BCV48 DC current gain BCV28 BCV48 DC current gain BCV28 BCV48 DC current gain BCV28 BCV48 V collector-emitter saturation ...

Page 5

... NXP Semiconductors PNP Darlington transistors 100000 handbook, full pagewidth h FE 80000 60000 40000 20000 0 −1 = − 2004 Dec 06 −10 Fig.2 DC current gain; typical values. 5 Product data sheet BCV28; BCV48 MGD836 − (mA) −10 3 ...

Page 6

... NXP Semiconductors PNP Darlington transistors PACKAGE OUTLINE Plastic surface-mounted package; collector pad for good heat transfer; 3 leads w M DIMENSIONS (mm are the original dimensions) UNIT 1.6 0.48 0.53 1.8 mm 1.4 0.35 0.40 1.4 OUTLINE VERSION IEC SOT89 2004 Dec scale 0.44 4.6 2 ...

Page 7

... NXP Semiconductors. In case of any inconsistency or conflict between information in this document and such terms and conditions, the latter will prevail. ...

Page 8

... NXP Semiconductors Customer notification This data sheet was changed to reflect the new company name NXP Semiconductors, including new legal definitions and disclaimers. No changes were made to the technical content, except for package outline drawings which were updated to the latest version. Contact information For additional information please visit: http://www ...

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