BCV48,115 NXP Semiconductors, BCV48,115 Datasheet - Page 4

• Manufacturer Part Number: BCV48,115
• Description: TRANS DARL PNP 60V 500MA SOT89
• Manufacturer: NXP Semiconductors

Specifications of BCV48,115

• Package / Case: SC-62, SOT-89, TO-243 (3 Leads + Tab)
• Mounting Type: Surface Mount
• Power - Max: 1.3W
• Current - Collector (ic) (max): 500mA
• Voltage - Collector Emitter Breakdown (max): 60V
• Transistor Type: PNP - Darlington
• Frequency - Transition: 220MHz
• Dc Current Gain (hfe) (min) @ Ic, Vce: 10000 @ 100mA, 5V
• Vce Saturation (max) @ Ib, Ic: 1V @ 100µA, 100mA
• Configuration: Single
• Transistor Polarity: PNP
• Mounting Style: SMD/SMT
• Collector- Emitter Voltage Vceo Max: 60 V
• Emitter- Base Voltage Vebo: 10 V
• Collector- Base Voltage Vcbo: 80 V
• Maximum Dc Collector Current: 0.5 A
• Maximum Collector Cut-off Current: 0.1 uA
• Maximum Operating Temperature: + 150 C
• Minimum Operating Temperature: - 65 C
• Polarity: PNP
• Number Of Elements: 1
• Collector-emitter Voltage: 60V
• Collector-base Voltage(max): 80V
• Emitter-base Voltage (max): 10V
• Base-emitter Saturation Voltage (max): 1.5@0.1mA@100mAV
• Collector-emitter Saturation Voltage: 1@0.1mA@100mAV
• Collector Current (dc) (max): 500mA
• Dc Current Gain: 2000@1mA@5V
• Operating Temp Range: -65C to 150C
• Operating Temperature Classification: Military
• Mounting: Surface Mount
• Pin Count: 3 +Tab
• Package Type: SOT-89
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Current - Collector Cutoff (max): -
• Lead Free Status / Rohs Status: Compliant
• Other names: 934021680115::BCV48 T/R::BCV48 T/R

NXP Semiconductors
CHARACTERISTICS
T
2004 Dec 06
I
I
h
V
V
V
f
amb
CBO
EBO
T
SYMBOL
FE
CEsat
BEsat
BEon
PNP Darlington transistors
= 25 °C unless otherwise specified.
collector-base cut-off current
emitter-base cut-off current
DC current gain
DC current gain
DC current gain
DC current gain
collector-emitter saturation
voltage
base-emitter saturation voltage
base-emitter on-state voltage
transition frequency
BCV28
BCV48
BCV28
BCV48
BCV28
BCV48
BCV28
BCV48
BCV28
BCV48
PARAMETER
I
I
I
I
I
I
I
I
I
I
I
f = 100 MHz
E
E
C
C
C
C
C
C
C
C
C
= 0 A; V
= 0 A; V
= 0 A; V
= −1 mA; V
= −10 mA; V
= −100 mA; V
= −500 mA; V
= −100 mA; I
= −100 mA; I
= −10 mA; I
= −30 mA; V
4
CB
CB
BE
CONDITIONS
= −30 V
= −60 V
= −10 V
CE
B
CE
CE
B
B
= −5 mA
CE
CE
= −5 V; see Fig.2
= −0.1 mA
= −0.1 mA
= −5 V; see Fig.2
= −5 V;
= −5 V; see Fig.2
= −5 V; see Fig.2
−
−
−
4 000
2 000
10 000 −
4 000
20 000 −
10 000 −
4 000
2 000
−
−
−
−
MIN.
BCV28; BCV48
−
−
−
−
−
−
−
−
−
−
−
220
TYP.
Product data sheet
−100
−100
−100
−
−
−
−
−
−
−
−
−1
−1.5
−1.4
−
MAX. UNIT
nA
nA
nA
V
V
V
MHz