BST51,115 NXP Semiconductors, BST51,115 Datasheet - Page 4

TRANS NPN 60V 500MA SOT89

BST51,115

Manufacturer Part Number
BST51,115
Description
TRANS NPN 60V 500MA SOT89
Manufacturer
NXP Semiconductors
Series
-r
Datasheets

Specifications of BST51,115

Package / Case
SC-62, SOT-89, TO-243 (3 Leads + Tab)
Transistor Type
NPN - Darlington
Current - Collector (ic) (max)
1A
Voltage - Collector Emitter Breakdown (max)
60V
Vce Saturation (max) @ Ib, Ic
1.3V @ 500µA, 500mA
Current - Collector Cutoff (max)
50nA
Dc Current Gain (hfe) (min) @ Ic, Vce
2000 @ 500mA, 10V
Power - Max
1.3W
Frequency - Transition
200MHz
Mounting Type
Surface Mount
Configuration
Single
Transistor Polarity
NPN
Mounting Style
SMD/SMT
Collector- Emitter Voltage Vceo Max
60 V
Emitter- Base Voltage Vebo
5 V
Collector- Base Voltage Vcbo
80 V
Maximum Dc Collector Current
1 A
Maximum Collector Cut-off Current
0.05 uA
Maximum Operating Temperature
+ 150 C
Minimum Operating Temperature
- 65 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
933644260115
BST51 T/R
BST51 T/R
Philips Semiconductors
CHARACTERISTICS
T
Note
1. Pulse test: t
2004 Dec 09
I
I
h
V
V
f
Switching times (between 10% and 90% levels); (see Fig.3)
t
t
amb
CES
EBO
T
on
off
SYMBOL
FE
CEsat
BEsat
NPN Darlington transistors
= 25 C unless otherwise specified.
collector-emitter cut-off current
emitter-base cut-off current
DC current gain
collector-emitter saturation
voltage
base-emitter saturation voltage
transition frequency
turn-on time
turn-off time
p
BST50
BST51
BST52
300 s;
PARAMETER
0.02.
V
V
V
I
V
I
I
T
I
I
f = 100 MHz
I
I
C
C
C
C
C
Con
Boff
j
BE
BE
BE
CE
I
I
= 150 C
= 0 A; V
= 500 mA; I
= 500 mA; I
= 500 mA; I
= 500 mA; V
C
C
= 500 mA; I
= 0.5 mA
= 0 V; V
= 0 V; V
= 0 V; V
= 10 V; note 1; (see Fig.2)
= 150 mA
= 500 mA
4
EB
CONDITIONS
CE
CE
CE
= 4 V
B
B
B
CE
= 45 V
= 60 V
= 80 V
= 0.5 mA
= 0.5 mA;
= 0.5 mA
Bon
= 5 V;
= 0.5 mA;
BST50; BST51; BST52
1000
2000
MIN.
200
400
1500
TYP.
Product specification
50
50
50
50
1.3
1.3
1.9
MAX.
nA
nA
nA
nA
V
V
V
MHz
ns
ns
UNIT

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