BST62,115 NXP Semiconductors, BST62,115 Datasheet - Page 8

• Manufacturer Part Number: BST62,115
• Description: TRANSISTOR DARL PNP SOT89
• Manufacturer: NXP Semiconductors
• Series: -r

Specifications of BST62,115

• Package / Case: SC-62, SOT-89, TO-243 (3 Leads + Tab)
• Transistor Type: PNP - Darlington
• Current - Collector (ic) (max): 1A
• Voltage - Collector Emitter Breakdown (max): 80V
• Vce Saturation (max) @ Ib, Ic: 1.3V @ 500µA, 500mA
• Current - Collector Cutoff (max): 50nA
• Dc Current Gain (hfe) (min) @ Ic, Vce: 2000 @ 500mA, 10V
• Power - Max: 1.3W
• Frequency - Transition: 200MHz
• Mounting Type: Surface Mount
• Configuration: Single
• Transistor Polarity: PNP
• Mounting Style: SMD/SMT
• Collector- Emitter Voltage Vceo Max: 80 V
• Emitter- Base Voltage Vebo: 5 V
• Collector- Base Voltage Vcbo: 90 V
• Maximum Dc Collector Current: 1 A
• Maximum Operating Temperature: + 150 C
• Minimum Operating Temperature: - 65 C
• Polarity: PNP
• Number Of Elements: 1
• Collector-emitter Voltage: 80V
• Collector-base Voltage(max): 90V
• Emitter-base Voltage (max): 5V
• Base-emitter Saturation Voltage (max): 1.9@0.5mA@500mAV
• Collector-emitter Saturation Voltage: 1.3@0.5mA@500mAV
• Collector Current (dc) (max): 1A
• Operating Temp Range: -65C to 150C
• Operating Temperature Classification: Military
• Mounting: Surface Mount
• Pin Count: 3 +Tab
• Package Type: SOT-89
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 933644300115; BST62 T/R; BST62 T/R

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NXP Semiconductors
Customer notification
This data sheet was changed to reflect the new company name NXP Semiconductors, including new legal
definitions and disclaimers. No changes were made to the technical content, except for package outline
drawings which were updated to the latest version.
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R75/05/pp8
Date of release: 2004 Dec 09
Document order number: 9397 750 13878