BSR33,115 NXP Semiconductors, BSR33,115 Datasheet

TRANS PNP 80V 1000MA SOT89

BSR33,115

Manufacturer Part Number
BSR33,115
Description
TRANS PNP 80V 1000MA SOT89
Manufacturer
NXP Semiconductors
Series
-r
Datasheet

Specifications of BSR33,115

Transistor Type
PNP
Current - Collector (ic) (max)
1A
Voltage - Collector Emitter Breakdown (max)
80V
Vce Saturation (max) @ Ib, Ic
500mV @ 50mA, 500mA
Dc Current Gain (hfe) (min) @ Ic, Vce
100 @ 100mA, 5V
Power - Max
1.35W
Frequency - Transition
100MHz
Mounting Type
Surface Mount
Package / Case
SC-62, SOT-89, TO-243 (3 Leads + Tab)
Current - Collector Cutoff (max)
-
Transistor Polarity
PNP
Number Of Elements
1
Collector-emitter Voltage
80V
Collector-base Voltage
90V
Emitter-base Voltage
5V
Collector Current (dc) (max)
1A
Dc Current Gain (min)
30
Power Dissipation
1.35W
Frequency (max)
100MHz
Operating Temp Range
-65C to 150C
Operating Temperature Classification
Military
Mounting
Surface Mount
Pin Count
3 +Tab
Package Type
SOT-89
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Current - Collector Cutoff (max)
-
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
Other names
933418140115
BSR33 T/R
BSR33 T/R
Product data sheet
Supersedes data of 1999 Apr 26
dbook, halfpage
DATA SHEET
BSR30; BSR31; BSR33
PNP medium power transistors
DISCRETE SEMICONDUCTORS
M3D109
2004 Dec 13

Related parts for BSR33,115

BSR33,115 Summary of contents

Page 1

DATA SHEET dbook, halfpage BSR30; BSR31; BSR33 PNP medium power transistors Product data sheet Supersedes data of 1999 Apr 26 DISCRETE SEMICONDUCTORS M3D109 2004 Dec 13 ...

Page 2

... NXP Semiconductors PNP medium power transistors FEATURES • High current (max • Low voltage (max. 80 V). APPLICATIONS • Telephony and general industrial applications • Thick and thin-film circuits. DESCRIPTION PNP medium power transistor in a SOT89 plastic package. NPN complements: BSR40; BSR41 and BSR43. ...

Page 3

... NXP Semiconductors PNP medium power transistors LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). SYMBOL PARAMETER V collector-base voltage CBO BSR30; BSR31 BSR33 V collector-emitter voltage CEO BSR30; BSR31 BSR33 V emitter-base voltage EBO I collector current (DC peak collector current CM I peak base current ...

Page 4

... NXP Semiconductors PNP medium power transistors CHARACTERISTICS = 25 °C unless otherwise specified. T amb SYMBOL PARAMETER I collector-base cut-off current CBO I emitter-base cut-off current EBO h DC current gain FE BSR30 BSR31; BSR33 DC current gain BSR30 BSR31; BSR33 DC current gain BSR30 BSR31; BSR33 V collector-emitter saturation CEsat ...

Page 5

... NXP Semiconductors PNP medium power transistors PACKAGE OUTLINE Plastic surface-mounted package; collector pad for good heat transfer; 3 leads w M DIMENSIONS (mm are the original dimensions) UNIT 1.6 0.48 0.53 1.8 mm 1.4 0.35 0.40 1.4 OUTLINE VERSION IEC SOT89 2004 Dec scale 0.44 4 ...

Page 6

... NXP Semiconductors. In case of any inconsistency or conflict between information in this document and such terms and conditions, the latter will prevail. ...

Page 7

... NXP Semiconductors Customer notification This data sheet was changed to reflect the new company name NXP Semiconductors, including new legal definitions and disclaimers. No changes were made to the technical content, except for package outline drawings which were updated to the latest version. Contact information For additional information please visit: http://www ...

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