BUT11APX-1200,127 NXP Semiconductors, BUT11APX-1200,127 Datasheet - Page 3

• Manufacturer Part Number: BUT11APX-1200,127
• Description: TRANS NPN 1200V 6A TO-220F
• Manufacturer: NXP Semiconductors

Specifications of BUT11APX-1200,127

• Transistor Type: NPN
• Current - Collector (ic) (max): 6A
• Voltage - Collector Emitter Breakdown (max): 550V
• Vce Saturation (max) @ Ib, Ic: 1V @ 400mA, 2A
• Current - Collector Cutoff (max): 1mA
• Dc Current Gain (hfe) (min) @ Ic, Vce: 20 @ 500mA, 5V
• Power - Max: 32W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 Full Pack
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Frequency - Transition: -
• Other names: 934056321127; BUT11APX-1200; BUT11APX-1200

Philips Semiconductors
April 1999
Silicon Diffused Power Transistor
R
Fig.3. Test circuit resistive load. V
B
and R
30-60 Hz
250
200
100
VIM
0
IC / mA
0
V
Fig.2. Oscilloscope display for V
CC
L
T
= 250 V; t
calculated from I
Fig.1. Test circuit for V
tp
6V
p
300R
= 20 µs; δ = t
R
VCE / V
B
Con
and I
p
R
VCC
CEOsust
Oscilloscope
Bon
T.U.T.
/ T = 0.01.
L
1R
VCEOsust
IM
100-200R
Horizontal
Vertical
min
requirements.
= -6 to +8 V
CEOsust
.
+ 50v
.
3
Fig.6. Switching times waveforms with inductive load.
Fig.4. Switching times waveforms with resistive load.
V
CC
IB
IC
-VBB
IC
IB
IBon
= 300 V; -V
Fig.5. Test circuit inductive load.
10 %
tr 30ns
ton
IB1
BE
90 %
ts
= 5 V; L
LB
-IB2
C
BUT11APX-1200
= 200 uH; L
LC
Product specification
ts
toff
tf
VCC
IB1
10 %
90 %
ICsat
ICsat
tf
B
T.U.T.
- IB2
= 1 uH
Rev 1.000
90 %
10 %
t
t