MJE802 STMicroelectronics, MJE802 Datasheet
MJE802
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MJE802 Summary of contents
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... SILICON NPN POWER DARLINGTON TRANSISTOR STMicroelectronics PREFERRED SALESTYPE NPN DARLINGTON APPLICATIONS GENERAL PURPOSE SWITCHING DESCRIPTION The MJE802 is a silicon Epitaxial-Base NPN transistor in monolithic Darlington configuration, mounted in Jedec SOT-32 plastic package intended for use in medium power linear and switching applications. ABSOLUTE MAXIMUM RATINGS Symbol ...
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... MJE802 THERMAL DATA R Thermal Resistance Junction-ambient thj-amb ELECTRICAL CHARACTERISTICS (T Symbol Parameter Collector Cut-off I CBO Current ( Collector Cut-off I CEO Current ( Emitter Cut-off Current I EBO ( Collector-Emitter V Sustaining Voltage CEO(sus Collector-Emitter V CE(sat) Saturation Voltage V Base-Emitter Voltage Current Gain FE Small Signal Current h fe Gain * Pulsed: Pulse duration = 300 s, duty cycle ...
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... TYP. 7.8 0.291 10.8 0.413 0.9 0.028 0.65 0.015 2.7 0.094 1.3 0.039 16.0 0.606 0.087 0.173 0.150 3.2 0.118 2.54 0.084 0.05 0.011 o 10 MJE802 MAX. 0.307 0.425 0.035 0.025 0.106 0.051 0.630 0.126 0.100 1: Base 2: Collector 3: Emitter 0016114/B 3/4 ...
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... MJE802 Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are subject to change without notice ...