MJE802 STMicroelectronics, MJE802 Datasheet - Page 4

• Manufacturer Part Number: MJE802
• Description: TRANS DARL NPN 80V 4A SOT-32
• Manufacturer: STMicroelectronics

Specifications of MJE802

• Transistor Type: NPN - Darlington
• Current - Collector (ic) (max): 4A
• Voltage - Collector Emitter Breakdown (max): 80V
• Vce Saturation (max) @ Ib, Ic: 3V @ 40mA, 4A
• Dc Current Gain (hfe) (min) @ Ic, Vce: 750 @ 1.5A, 3V
• Power - Max: 40W
• Mounting Type: Through Hole
• Package / Case: TO-126-3
• Configuration: Single
• Transistor Polarity: NPN
• Mounting Style: SMD/SMT
• Collector- Emitter Voltage Vceo Max: 80 V
• Emitter- Base Voltage Vebo: 5 V
• Collector- Base Voltage Vcbo: 80 V
• Maximum Dc Collector Current: 4 A
• Maximum Collector Cut-off Current: 100 uA
• Maximum Operating Temperature: + 150 C
• Dc Collector/base Gain Hfe Min: 100
• Polarity: NPN
• Number Of Elements: 1
• Collector-emitter Voltage: 80V
• Collector-base Voltage: 80V
• Emitter-base Voltage: 5V
• Collector-emitter Saturation Voltage: 3V
• Collector Current (dc) (max): 8A
• Dc Current Gain: 100
• Operating Temp Range: -65C to 150C
• Operating Temperature Classification: Military
• Mounting: Through Hole
• Pin Count: 3 +Tab
• Package Type: SOT-32
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Current - Collector Cutoff (max): -
• Frequency - Transition: -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: 497-2549-5

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