2SA1145-O(TE6,F,M) Toshiba, 2SA1145-O(TE6,F,M) Datasheet - Page 4

• Manufacturer Part Number: 2SA1145-O(TE6,F,M)
• Description: TRANS PNP 150V 50A TO-92
• Manufacturer: Toshiba

Specifications of 2SA1145-O(TE6,F,M)

• Transistor Type: PNP
• Current - Collector (ic) (max): 50mA
• Voltage - Collector Emitter Breakdown (max): 150V
• Vce Saturation (max) @ Ib, Ic: 1V @ 1mA, 10mA
• Dc Current Gain (hfe) (min) @ Ic, Vce: 80 @ 10mA, 5V
• Power - Max: 800mW
• Frequency - Transition: 200MHz
• Mounting Type: Through Hole
• Package / Case: TO-92-3 (Long Body), TO-226
• Configuration: Single
• Transistor Polarity: PNP
• Mounting Style: Through Hole
• Collector- Emitter Voltage Vceo Max: - 150 V
• Emitter- Base Voltage Vebo: - 5 V
• Continuous Collector Current: - 50 mA
• Power Dissipation: 800 mW
• Dc Collector/base Gain Hfe Min: 80
• Gain Bandwidth Product Ft: 200 MHz
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Current - Collector Cutoff (max): -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant

2SA1145
P
– Ta
C
1200
No heat sink
800
400
0
0
40
80
120
160
Ambient temperature Ta (°C)
4
2006-11-09