2SA1160-B(TE6,F,M) Toshiba, 2SA1160-B(TE6,F,M) Datasheet

2SA1160-B(TE6,F,M)

Manufacturer Part Number

2SA1160-B(TE6,F,M)

Description

TRANS PNP 20V 2A TO-92

Manufacturer

Toshiba

Datasheet

1.2SA1160-BTE6FM.pdf (4 pages)

Specifications of 2SA1160-B(TE6,F,M)

Transistor Type

PNP

Current - Collector (ic) (max)

Voltage - Collector Emitter Breakdown (max)

10V

Vce Saturation (max) @ Ib, Ic

500mV @ 50mA, 2A

Dc Current Gain (hfe) (min) @ Ic, Vce

200 @ 500mA, 1V

Power - Max

900mW

Frequency - Transition

140MHz

Mounting Type

Through Hole

Package / Case

TO-92-3 (Long Body), TO-226

Lead Free Status / RoHS Status

Lead free / RoHS Compliant

Current - Collector Cutoff (max)

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Strobe Flash Applications

Medium Power Amplifier Applications

•

Absolute Maximum Ratings

High DC current gain and excellent h

: h

Low saturation voltage

: V

Collector-base voltage

Collector-emitter voltage

Emitter-base voltage

Collector current

Base current

Collector power dissipation

Junction temperature

Storage temperature range

Note 1: Pulse width = 10 ms (max), duty cycle = 30% (max)

Note 2: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the

FE (1)

FE (2)

CE (sat)

= 140 to 600 (V

= 60 (min), 120 (typ.) (V

significant change in temperature, etc.) may cause this product to decrease in the reliability significantly

even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute

maximum ratings.

Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook

(“Handling Precautions”/"Derating Concept and Methods") and individual reliability data (i.e. reliability test

report and estimated failure rate, etc).

Characteristics

= −0.5 V (max) (I

TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process)

Pulsed (Note 1)

= −1 V, I

= −2 A, I

(Ta = 25°C)

= −1 V, I

Symbol

= −0.5 A)

CBO

CEO

EBO

stg

= −50 mA)

2SA1160

linearity

= −4 A)

−55 to 150

Rating

−20

−10

900

150

−6

−2

−4

−2

Unit

°C

Weight: 0.36 g (typ.)

JEDEC

JEITA

TOSHIBA

TO-92MOD

2-5J1A

2011-01-18

―

2SA1160

Unit: mm

Related parts for 2SA1160-B(TE6,F,M)

2SA1160-B(TE6,F,M) Summary of contents

Page 1

... FE = −0 − − −50 mA) B (Ta = 25°C) Symbol Rating Unit − CBO − CEO − EBO − − − 900 150 °C j −55 to 150 T °C stg 1 2SA1160 Unit: mm JEDEC TO-92MOD JEITA ― TOSHIBA 2-5J1A Weight: 0.36 g (typ.) 2011-01-18 ...

Page 2

... (sat − − − −0 − MHz Part No. (or abbreviation code) Lot No. Note 4 2 2SA1160 Min Typ. Max Unit ⎯ ⎯ −100 nA ⎯ ⎯ −100 nA −10 ⎯ ⎯ V −6 ⎯ ⎯ V ⎯ 140 600 ⎯ 60 120 ⎯ −0.20 −0.50 V ⎯ ...

Page 3

... Common emitter −0 −0.3 −0.1 −0.05 −0.03 −0.01 −3 −5 −0.01 −0.03 10 ms** 1.6 1.2 0.8 0.4 0 −30 0 (V) 3 2SA1160 I – Common emitter −1 V −25 25 −0.8 −1.2 −1.6 −2.0 Base-emitter voltage V ( – (sat 100°C 25 −25 −3 −0.1 −0.3 − ...

Page 4

... Please contact your TOSHIBA sales representative for details as to environmental matters such as the RoHS compatibility of Product. Please use Product in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances, including without limitation, the EU RoHS Directive. TOSHIBA assumes no liability for damages or losses occurring as a result of noncompliance with applicable laws and regulations. 4 2SA1160 2011-01-18 ...

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