2SA1203-Y(TE12L,CF Toshiba, 2SA1203-Y(TE12L,CF Datasheet - Page 3

• Manufacturer Part Number: 2SA1203-Y(TE12L,CF
• Description: TRANSISTOR PNP 30V 1.5A SC-62
• Manufacturer: Toshiba

Specifications of 2SA1203-Y(TE12L,CF

• Transistor Type: PNP
• Current - Collector (ic) (max): 1.5A
• Voltage - Collector Emitter Breakdown (max): 30V
• Vce Saturation (max) @ Ib, Ic: 2V @ 30mA, 1.5A
• Dc Current Gain (hfe) (min) @ Ic, Vce: 160 @ 500mA, 2V
• Power - Max: 500mW
• Frequency - Transition: 120MHz
• Mounting Type: Surface Mount
• Package / Case: SC-62, SOT-89, TO-243 (3 Leads + Tab)
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Current - Collector Cutoff (max): -

−3000
−1000
−0.05
−0.03
−0.01
−500
−300
−100
−1.2
−0.8
−0.4
−0.5
−0.3
−0.1
−50
−30
−10
−3
−1
−5
−0.1
0
−1
0
I C max
(continuous)
I C max (pulse)*
*: Single nonrepetitive pulse
−10
Ta = 25°C
Curves must be derated
linearly with increase in
temperature.
Tested without a substrate.
−3
−0.3
Collector-emitter voltage V
Collector-emitter voltage V
−4
DC operation
Ta = 25°C
Collector current I
−10
Safe Operating Area
−8
−1
Ta = 100°C
V
CE (sat)
−30
I
I B = −1 mA
C
100 ms*
−25
– V
25
−3
−8
10 ms*
−6
−4
−3
−2
−100
CE
0
1 s*
– I
C
V CEO max
C
−10
Common emitter
Ta = 25°C
−300
(mA)
Common emitter
I C /I B = 50
CE
CE
−12
1 ms*
(V)
−30
(V)
−1000
−3000
−100
−16
3
3000
1000
−1.6
−1.2
−0.8
−0.4
300
100
500
1.2
1.0
0.8
0.6
0.4
0.2
50
30
10
0
0
−1
0
0
(1)
(2)
Ta = 100°C 25
20
−3
−0.4
Base-emitter voltage V
Ambient temperature Ta (°C)
Collector current I
40
−10
Ta = 100°C
−0.8
60
−30
−25
25
I
h
(1) Mounted on a ceramic
(2) No heat sink
P
C
−25
FE
C
– V
substrate (250 mm
80
– Ta
– I
−1.2
−100
BE
C
100
C
BE
−300
(mA)
Common emitter
V CE = −2 V
Common emitter
V CE = −2 V
−1.6
120
(V)
2
× 0.8 mm t)
−1000
140
−2.0
2011-01-19
2SA1203
−3000
160