2SA2097(TE16L1,NQ) Toshiba, 2SA2097(TE16L1,NQ) Datasheet

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2SA2097(TE16L1,NQ)

Manufacturer Part Number
2SA2097(TE16L1,NQ)
Description
TRANSISTOR PNP 50V 5A SC-62
Manufacturer
Toshiba
Datasheet

Specifications of 2SA2097(TE16L1,NQ)

Transistor Type
PNP
Current - Collector (ic) (max)
5A
Voltage - Collector Emitter Breakdown (max)
50V
Vce Saturation (max) @ Ib, Ic
270mV @ 53mA, 1.6A
Dc Current Gain (hfe) (min) @ Ic, Vce
200 @ 500mA, 2V
Power - Max
1W
Mounting Type
Surface Mount
Package / Case
SC-62, SOT-89, TO-243 (3 Leads + Tab)
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Current - Collector Cutoff (max)
-
Frequency - Transition
-

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High-Speed Swtching Applications
DC-DC Converter Applications
Absolute Maximum Ratings
High DC current gain: h
Low collector-emitter saturation: V
High-speed switching: t
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Base current
Collector power
dissipation
Junction temperature
Storage temperature range
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating
conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report
and estimated failure rate, etc).
Characteristics
f
Ta = 25°C
Tc = 25°C
FE
= 55 ns (typ.)
Pulse
TOSHIBA Transistor Silicon PNP Epitaxial Type
DC
= 200 to 500 (I
CE (sat)
(Ta = 25°C)
Symbol
V
V
V
T
I
P
CBO
CEO
EBO
I
CP
I
T
stg
C
B
C
2SA2097
j
C
= −0.27 V (max)
= −0.5 A)
−55 to 150
Rating
−0.5
−50
−50
−10
150
−7
−5
20
1
1
Unit
°C
°C
W
V
V
V
A
A
Weight: 0.36 g (typ.)
JEDEC
JEITA
TOSHIBA
2-7J1A
2006-11-09
2SA2097
Unit: mm

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2SA2097(TE16L1,NQ) Summary of contents

Page 1

... Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc) ...

Page 2

Electrical Characteristics Characteristics Collector cut-off current Emitter cut-off current Collector-emitter breakdown voltage DC current gain Collector-emitter saturation voltage Base-emitter saturation voltage Rise time Switching time Storage time Fall time μs Duty cycle < 1% Figure 1 Switching ...

Page 3

I – −6 Common emitter Tc = 25°C −60 mA −50 mA −70 mA −40 mA −30 mA −4 −20 mA −10 mA −2 −5 mA − − −2 −4 ...

Page 4

Safe Operation Area −100 −50 −30 100 μ max (pulsed) * −10 − max (continuous) 1 ms* −3 Direct movement −1 (Tc = 25°C) −0.5 −0.3 ...

Page 5

... The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any patents or other rights of TOSHIBA or the third parties. • ...

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