2SC5439(F) Toshiba, 2SC5439(F) Datasheet - Page 3

• Manufacturer Part Number: 2SC5439(F)
• Description: TRANS NPN 450V 8A SC-67
• Manufacturer: Toshiba

Specifications of 2SC5439(F)

• Transistor Type: NPN
• Current - Collector (ic) (max): 8A
• Voltage - Collector Emitter Breakdown (max): 450V
• Vce Saturation (max) @ Ib, Ic: 1V @ 640mA, 3.2A
• Dc Current Gain (hfe) (min) @ Ic, Vce: 14 @ 1A, 5V
• Power - Max: 2W
• Mounting Type: Through Hole
• Package / Case: SC-67
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Current - Collector Cutoff (max): -
• Frequency - Transition: -

0.03
0.01
0.3
0.1
10
10
0.001
8
6
4
2
0
3
1
8
6
4
2
0
0
0
1800
Common emitter
Tc = 25°C
Common emitter
I C /I B = 5
Common emitter
V CE = 5 V
0.003
0.2
Collector-emitter voltage V
2
Base-emitter voltage V
0.01
Collector current I
0.4
Tc = 100°C
4
0.03
V
CE (sat)
I
I
0.6
C
C
– V
– V
0.1
6
Tc = 100°C
CE
BE
0.8
– I
0.3
25
C
C
8
BE
−55
1.0
CE
(A)
1600
1
(V)
I B = 50 mA
(V)
25
10
1.2
−55
1400
1200
1000
800
600
400
300
200
100
3
1.4
12
10
3
0.05
0.03
0.01
500
300
100
0.5
0.5
0.3
0.1
0.3
0.1
50
30
10
0.001
10
0.001
30
10
5
3
1
5
3
1
3
1
1
I C max
(continuous)
*: Single nonrepetitive pulse
Curves must be derated linearly
with increase in temperature.
I C max (pulsed)*
Tc = 25°C
0.003
0.003
DC operation
Tc = 25°C
3
Collector-emitter voltage V
25
0.01
0.01
Collector current I
Collector current I
Tc = 100°C
10
25
−55
Safe Operating Area
10 ms*
100 ms*
0.03
0.03
V
Tc = 100°C
−55
BE (sat)
30
h
FE
0.1
0.1
– I
100
– I
C
1 ms*
0.3
0.3
C
C
C
Common emitter
V CE = 5 V
Common emitter
I C /I B = 5
300
10 µs*
(A)
(A)
CE
1
1
V CEO max
100 µs*
(V)
1000
3
3
2004-07-26
2SC5439
3000
10
10