BC 848A E6327 Infineon Technologies, BC 848A E6327 Datasheet - Page 3
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BC 848A E6327
Manufacturer Part Number
BC 848A E6327
Description
TRANSISTOR NPN AF 30V SOT-23
Manufacturer
Infineon Technologies
Datasheet
1.BC847AE6327.pdf
(15 pages)
Specifications of BC 848A E6327
Package / Case
SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
Transistor Type
NPN
Current - Collector (ic) (max)
100mA
Voltage - Collector Emitter Breakdown (max)
30V
Vce Saturation (max) @ Ib, Ic
600mV @ 5mA, 100mA
Dc Current Gain (hfe) (min) @ Ic, Vce
110 @ 2mA, 5V
Power - Max
330mW
Frequency - Transition
250MHz
Mounting Type
Surface Mount
Configuration
Single
Transistor Polarity
NPN
Mounting Style
SMD/SMT
Maximum Operating Frequency
250 MHz
Collector- Emitter Voltage Vceo Max
30 V
Continuous Collector Current
0.1 A
Power Dissipation
330 mW
Maximum Operating Temperature
+ 150 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Current - Collector Cutoff (max)
-
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
BC848AE6327XT
SP000010568
SP000010568
Maximum Ratings
Parameter
Collector-emitter voltage
BC846...
BC847..., BC850...
BC848..., BC849...
Collector-emitter voltage
BC846...
BC847..., BC850...
BC848..., BC849...
Collector-base voltage
BC846...
BC847..., BC850...
BC848..., BC849...
Emitter-base voltage
BC846...
BC847..., BC850...
BC848..., BC849...
Collector current
Peak collector current, t
Total power dissipation-
T
T
T
T
Junction temperature
Storage temperature
1
Thermal Resistance
Parameter
Junction - soldering point
BC846-BC850
BC847F
BC847L3-BC848L3
BC846W-BC850W
For calculation of R
S
S
S
S
≤ 71 °C, BC846-BC850
≤ 128 °C, BC847F
≤ 135 °C, BC847L3-BC848L3
≤ 124 °C, BC846W-BC850W
thJA
please refer to Application Note Thermal Resistance
p
≤ 10 ms
1)
3
Symbol
V
V
V
V
I
I
P
T
T
Symbol
R
C
CM
j
stg
CEO
CES
CBO
EBO
tot
thJS
-65 ... 150
Value
BC846...-BC850...
Value
≤ 240
≤ 105
≤ 90
≤ 60
330
250
250
250
100
200
150
65
45
30
80
50
30
80
50
30
6
6
6
2010-06-28
Unit
V
mA
mW
°C
Unit
K/W