BC 818K-40 E6327 Infineon Technologies, BC 818K-40 E6327 Datasheet - Page 2
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BC 818K-40 E6327
Manufacturer Part Number
BC 818K-40 E6327
Description
TRANSISTORS NPN AF 25V SOT-23
Manufacturer
Infineon Technologies
Datasheet
1.BC_817K-25_E6327.pdf
(11 pages)
Specifications of BC 818K-40 E6327
Package / Case
SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
Transistor Type
NPN
Current - Collector (ic) (max)
500mA
Voltage - Collector Emitter Breakdown (max)
25V
Vce Saturation (max) @ Ib, Ic
700mV @ 50mA, 500mA
Dc Current Gain (hfe) (min) @ Ic, Vce
250 @ 100mA, 1V
Power - Max
500mW
Frequency - Transition
170MHz
Mounting Type
Surface Mount
Dc Collector/base Gain Hfe Min
250 at 100 mA at 1 V
Configuration
Single
Transistor Polarity
NPN
Mounting Style
SMD/SMT
Collector- Emitter Voltage Vceo Max
25 V
Emitter- Base Voltage Vebo
5 V
Maximum Dc Collector Current
0.5 A
Power Dissipation
500 mW
Maximum Operating Frequency
170 MHz
Maximum Operating Temperature
+ 150 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Current - Collector Cutoff (max)
-
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
Other names
SP000271908
Maximum Ratings
Parameter
Collector-emitter voltage
BC817...
BC818...
Collector-base voltage
BC817...
BC818...
Emitter-base voltage
Collector current
Peak collector current
Base current
Peak base current
Total power dissipation-
T
T
T
Junction temperature
Storage temperature
1
Thermal Resistance
Parameter
Junction - soldering point
BC817, BC818
BC817K, BC818K
BC817W/KW, BC818W/KW
For calculation of R
S
S
S
≤ 79 °C, BC817, BC818
≤ 115 °C, BC817K, BC818K
≤ 130 °C, BC817W/KW, BC818...W/KW
thJA
please refer to Application Note Thermal Resistance
1)
2
Symbol
V
V
V
I
I
I
I
P
T
T
Symbol
R
C
CM
B
BM
j
stg
CEO
CBO
EBO
tot
thJS
-65 ... 150
Value
Value
≤ 215
BC817.../BC818...
1000
≤ 70
≤ 80
330
500
250
500
100
200
150
45
25
50
30
5
2008-04-11
Unit
V
mA
mW
°C
Unit
K/W