BCW65ALT1G ON Semiconductor, BCW65ALT1G Datasheet - Page 3

• Manufacturer Part Number: BCW65ALT1G
• Description: TRANS NPN GP 32V 800MA SOT-23
• Manufacturer: ON Semiconductor

Specifications of BCW65ALT1G

• Transistor Type: NPN
• Current - Collector (ic) (max): 800mA
• Voltage - Collector Emitter Breakdown (max): 32V
• Vce Saturation (max) @ Ib, Ic: 700mV @ 50mA, 500mA
• Current - Collector Cutoff (max): 20nA
• Dc Current Gain (hfe) (min) @ Ic, Vce: 100 @ 100mA, 1V
• Power - Max: 225mW
• Frequency - Transition: 100MHz
• Mounting Type: Surface Mount
• Package / Case: SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
• Transistor Polarity: NPN
• Number Of Elements: 1
• Collector-emitter Voltage: 32V
• Collector-base Voltage: 60V
• Emitter-base Voltage: 5V
• Collector Current (dc) (max): 800mA
• Dc Current Gain (min): 35
• Power Dissipation: 300mW
• Frequency (max): 100MHz
• Operating Temp Range: -55C to 150C
• Operating Temperature Classification: Military
• Mounting: Surface Mount
• Pin Count: 3
• Package Type: SOT-23
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: BCW65ALT1G; BCW65ALT1GOSTR

Product Bulletin #16134
AFFECTED DEVICE LIST
PART
2N7002ET1G
2N7002LT1
2N7002LT1G
BAS116LT1G
BAS16LT1
BAS16LT1G
BAS19LT1G
BAS20LT1G
BAS21LT1
BAS21LT1G
BAS21LT1H
BAS21LT3
BAS21LT3G
BAS40-04LT1
BAS40-04LT1G
BAS40-06LT1G
BAS40LT1
BAS40LT1G
BAS70-04LT1
BAS70-04LT1G
BAS70LT1G
BAT54ALT1
BAT54ALT1G
BAT54CLT1G
BAT54LT1
BAT54SLT1
BAT54SLT1G
BAV199LT1
BAV199LT1G
BAV70LT1
BAV70LT1G
BAV70LT3G
BAV74LT1G
BAV99LT1G
BAV99LT3G
BAW56LT1
BAW56LT1G
BAW56LT3G
BC807-16LT1
BC807-16LT1G
BC807-16LT3G
BC807-25LT1
BC807-25LT1G
BC807-25LT3G
BC807-40LT1
BC807-40LT1G
BC807-40LT3G
BC817-16LT1
BC817-16LT1G
BC817-16LT3G
BC817-25LT1
BC817-25LT1G
BC817-25LT1H
Issue Date: 11 Jul 2008
Rev.07-02-06
Page 3 of 14