BCW65ALT1G ON Semiconductor, BCW65ALT1G Datasheet - Page 5

• Manufacturer Part Number: BCW65ALT1G
• Description: TRANS NPN GP 32V 800MA SOT-23
• Manufacturer: ON Semiconductor

Specifications of BCW65ALT1G

• Transistor Type: NPN
• Current - Collector (ic) (max): 800mA
• Voltage - Collector Emitter Breakdown (max): 32V
• Vce Saturation (max) @ Ib, Ic: 700mV @ 50mA, 500mA
• Current - Collector Cutoff (max): 20nA
• Dc Current Gain (hfe) (min) @ Ic, Vce: 100 @ 100mA, 1V
• Power - Max: 225mW
• Frequency - Transition: 100MHz
• Mounting Type: Surface Mount
• Package / Case: SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
• Transistor Polarity: NPN
• Number Of Elements: 1
• Collector-emitter Voltage: 32V
• Collector-base Voltage: 60V
• Emitter-base Voltage: 5V
• Collector Current (dc) (max): 800mA
• Dc Current Gain (min): 35
• Power Dissipation: 300mW
• Frequency (max): 100MHz
• Operating Temp Range: -55C to 150C
• Operating Temperature Classification: Military
• Mounting: Surface Mount
• Pin Count: 3
• Package Type: SOT-23
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: BCW65ALT1G; BCW65ALT1GOSTR

Product Bulletin #16134
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Issue Date: 11 Jul 2008
Rev.07-02-06
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