BC 818K-16W E6327 Infineon Technologies, BC 818K-16W E6327 Datasheet - Page 6
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BC 818K-16W E6327
Manufacturer Part Number
BC 818K-16W E6327
Description
TRANSISTOR NPN AF 25V SOT-323
Manufacturer
Infineon Technologies
Datasheet
1.BC_817K-25_E6327.pdf
(11 pages)
Specifications of BC 818K-16W E6327
Package / Case
SOT-323
Transistor Type
NPN
Current - Collector (ic) (max)
500mA
Voltage - Collector Emitter Breakdown (max)
25V
Vce Saturation (max) @ Ib, Ic
700mV @ 50mA, 500mA
Dc Current Gain (hfe) (min) @ Ic, Vce
100 @ 100mA, 1V
Power - Max
250mW
Frequency - Transition
170MHz
Mounting Type
Surface Mount
Dc Collector/base Gain Hfe Min
100 at 100 mA at 1 V
Configuration
Single
Transistor Polarity
NPN
Mounting Style
SMD/SMT
Collector- Emitter Voltage Vceo Max
25 V
Emitter- Base Voltage Vebo
5 V
Maximum Dc Collector Current
0.5 A
Power Dissipation
250 mW
Maximum Operating Frequency
170 MHz
Maximum Operating Temperature
+ 150 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Current - Collector Cutoff (max)
-
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
Other names
BC 818-16W E6327
BC 818-16W E6327
BC81816WE6327
BC818K16WE6327XT
SP000010488
SP000271932
BC 818-16W E6327
BC81816WE6327
BC818K16WE6327XT
SP000010488
SP000271932
Base-emitter saturation voltage
I
Transition frequency f
V
Ι
C
f
C
CE
T
= ƒ ( V
10
MHz
mA
10
10
10
10
10
10
10
5
5
5
= parameter in V, f = 2 GHz
5
5
-1
3
2
1
0
10
3
2
1
0
BC 817/818
BC 817/818
0
BEsat
), h
1.0
FE
10
150
-50
25 ˚C
1
= 10
˚C
˚C
T
2.0
= ƒ ( I
10
C
2
)
3.0
mA
EHP00218
Ι
EHP00222
V
C
V
BEsat
10
4.0
3
6
Collector cutoff current I
V
Collector-base capacitance C
Emitter-base capacitance C
BC817, BC818: - - - , BC817K, BC818K: ___
Ι
CBO
CBO
10
10
10
10
10
10
nA
pF
75
60
55
50
45
40
35
30
25
20
15
10
5
0
= 25 V
5
4
3
2
1
0
0
0
BC 817/818
2
4
6
50
8
max
BC817.../BC818...
10
CEB: BC817/BC818
CEB: BC817K/BC818K
CCB: BC817/BC818
CCB: BC817K/BC818K
CBO
12
typ
100
eb
14
= ƒ ( T
cb
2008-04-11
= ƒ ( V
= ƒ ( V
16
˚C
EHP00221
T
A
V
A
EB
V
)
CB
CB
)
/
150
V
20
)
EB