MMBT4126LT3G ON Semiconductor, MMBT4126LT3G Datasheet - Page 2

• Manufacturer Part Number: MMBT4126LT3G
• Description: TRANS GP SS PNP 25V SOT23
• Manufacturer: ON Semiconductor

Specifications of MMBT4126LT3G

• Transistor Type: PNP
• Current - Collector (ic) (max): 200mA
• Voltage - Collector Emitter Breakdown (max): 25V
• Vce Saturation (max) @ Ib, Ic: 400mV @ 5mA, 50mA
• Dc Current Gain (hfe) (min) @ Ic, Vce: 120 @ 2mA, 1V
• Power - Max: 225mW
• Frequency - Transition: 250MHz
• Mounting Type: Surface Mount
• Package / Case: SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Current - Collector Cutoff (max): -

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Initial Product/Process Change Notification #16009
QUALIFICATION PLAN:
Qualification of each device type to be transferred is being performed to the following
requirements:
Reliability testing will be performed on qualification vehicles chosen based on die size,
voltage rating, and run rates.
Planned reliability tests are:
Electrical Characterization Plan:
Datasheet specifications and product electrical performance will remain unchanged
Characterization of each qual vehicle device will be performed to the following requirements:
Issue Date: 08 May 2007
HTSL
AC-PC
TC -PC Temperature Cycle-PC
H3TRB
– PC
IOL-PC IOL-PC
1) Three temperature electrical characterization ( 3 lots, 30 units each at -55C, 25C, and
2) ESD testing (3 lots) Human Body Model, Machine Model
1) ESD performance ( HBM, MM) on 15 units from 1 lot
2) Three temperature characterization on 30 units from 3 lots
Test
150C)
High Temp Storage Life Ta=150°
Autoclave-PC
High
Temp Rev Bias + PC
Humidity
Name
High
121°C/100% RH/15psig
Ta=-65/+150deg.C, Air to
air, Dwell = 10 min,
Ta=85°C, 85% RH, 80%
rated or 100V max
Ta=+25°C, delta Tj=100°C
On/of = 2 min
Rev.07-02-06
Test Conditions
c = 0, Room
c = 0, Room
c = 0, Room
c = 0, Room
c = 0, Room
End Point
Req’s
Test Results
Read Point
15000 Cys.
1008 Hrs.
1008 Hrs.
1000 Cys
96 Hrs
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