BC 856BW H6327 Infineon Technologies, BC 856BW H6327 Datasheet - Page 6
![no-image](/images/manufacturer_photos/0/3/327/infineon_technologies_sml.jpg)
BC 856BW H6327
Manufacturer Part Number
BC 856BW H6327
Description
TRANS AF PNP 65V 100MA SOT323
Manufacturer
Infineon Technologies
Datasheet
1.BC857CE6327.pdf
(14 pages)
Specifications of BC 856BW H6327
Transistor Type
PNP
Current - Collector (ic) (max)
100mA
Voltage - Collector Emitter Breakdown (max)
65V
Vce Saturation (max) @ Ib, Ic
650mV @ 5mA, 100mA
Dc Current Gain (hfe) (min) @ Ic, Vce
220 @ 2mA, 5V
Power - Max
250mW
Frequency - Transition
250MHz
Mounting Type
Surface Mount
Package / Case
SOT-323
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Current - Collector Cutoff (max)
-
DC current gain h
V
h
Base-emitter saturation voltage
I
C
Ι
FE
CE
C
= ƒ(V
10
mA
10
10
10
10
10
10
10
5
5
5
= 1 V
5
5
-1
3
2
1
0
10
2
1
0
0
-2
100
BEsat
25
-50
C
C
C
0.2
5
), h
10
FE
-1
100 C
25
0.4
-50C
FE
= 20
C
C
5
= ƒ(I
10
0.6
0
C
)
0.8
5
10
1
EHP00382
Ι
V
EHP00379
mA
V
C
BEsat
10
1.2
2
6
Ι
Ι
Collector-emitter saturation voltage
I
Collector cutoff current I
V
CB0
C
C
CBO
10
10
= ƒ(V
mA
10
10
10
10
10
10
10
10
nA
5
5
-1
5
5
5
5
-1
1
0
0
2
1
4
3
2
= 30 V
0
0
CEsat
0.1
), h
FE
50
max
= 20
0.2
BC856...-BC860...
100
-50
25
CBO
0.3
C
C
C
100
= ƒ(T
2008-04-29
typ
0.4
EHP00380
EHP00381
C
T
V
A
A
CEsat
)
V
150
0.5