MMBTA 56 LT1 Infineon Technologies, MMBTA 56 LT1 Datasheet - Page 3

• Manufacturer Part Number: MMBTA 56 LT1
• Description: TRANSISTOR PNP 80V SOT-23
• Manufacturer: Infineon Technologies

Specifications of MMBTA 56 LT1

• Package / Case: SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
• Transistor Type: PNP
• Current - Collector (ic) (max): 500mA
• Voltage - Collector Emitter Breakdown (max): 80V
• Vce Saturation (max) @ Ib, Ic: 250mV @ 10mA, 100mA
• Current - Collector Cutoff (max): 100nA
• Dc Current Gain (hfe) (min) @ Ic, Vce: 100 @ 100mA, 1V
• Power - Max: 330mW
• Frequency - Transition: 100MHz
• Mounting Type: Surface Mount
• Configuration: Single
• Maximum Power Dissipation: 330 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: MMBTA 56 LT1; MMBTA56LT1INTR; MMBTA56LT1XT; SP000011691

DC current gain h
V
h
Base-emitter saturation voltage
I
C
C
FE
CE
=
mA
10
10
10
10
10
10
10
10
10
5
5
5
= 1 V
-1
3
2
1
0
3
2
1
0
10
(V
0
100 C
-1
-50 C
BEsat
25 C
), h
10
0
FE
0.5
FE
= 10
=
10
1
(I
C
)
1.0
10
2
V
C
100 ˚C
-50 ˚C
BEsat
25 ˚C
EHP00852
mA
EHP00849
V
10
1.5
3
3
Collector-emitter saturation voltage
I
Collector current I
V
C
C
C
CE
= (V
mA
10
10
10
10
10
mA
5
5
10
10
10
10
= 1V
3
2
1
0
5
5
5
-1
0.0
3
2
1
0
0
CEsat
), h
FE
SMBTA56/MMBTA56
0.5
= 10
100
C
25 C
-50C
= (V
C
0.5
BE
)
1.0
2007-04-19
V
100 C
-50 C
V
BE
V
25 C
CEsat
EHP00850
EHP00846
V
1.0
1.5