SMBT2907AE6327 Infineon Technologies, SMBT2907AE6327 Datasheet - Page 2

• Manufacturer Part Number: SMBT2907AE6327
• Description: TRANS PNP 60V SOT-23
• Manufacturer: Infineon Technologies

Specifications of SMBT2907AE6327

• Transistor Type: PNP
• Current - Collector (ic) (max): 600mA
• Voltage - Collector Emitter Breakdown (max): 60V
• Vce Saturation (max) @ Ib, Ic: 1.6V @ 50mA, 500mA
• Dc Current Gain (hfe) (min) @ Ic, Vce: 100 @ 150mA, 10V
• Power - Max: 330mW
• Frequency - Transition: 200MHz
• Mounting Type: Surface Mount
• Package / Case: SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Current - Collector Cutoff (max): -
• Other names: SMBT2907A; SMBT2907AE6327XT; SMBT2907AINTR; SMBT2907AXTINTR; SMBT2907AXTINTR; SP000011181

Electrical Characteristics at T
Parameter
DC Characteristics
Collector-emitter breakdown voltage
I
Collector-base breakdown voltage
I
Emitter-base breakdown voltage
I
Collector-base cutoff current
V
V
Emitter-base cutoff current
V
DC current gain
I
I
I
I
I
Collector-emitter saturation voltage
I
I
Base emitter saturation voltage-
I
I
1
C
C
E
C
C
C
C
C
C
C
C
C
Puls test: t
CB
CB
EB
= 10 µA, I
= 10 mA, I
= 10 µA, I
= 100 µA, V
= 1 mA, V
= 10 mA, V
= 150 mA, V
= 500 mA, V
= 150 mA, I
= 500 mA, I
= 150 mA, I
= 500 mA, I
= 5 V, I
= 50 V, I
= 50 V, I
300µs, D = 2%
C
C
E
CE
B
E
E
= 0
CE
= 0
= 0
B
B
B
B
CE
= 0
= 0
= 0 , T
CE
CE
1)
= 10 V
= 15 mA
= 50 mA
= 15 mA
= 50 mA
= 10 V
= 10 V
= 10 V
= 10 V
A
= 150 °C
A
1)
= 25°C, unless otherwise specified
1)
2
Symbol
V
V
V
I
I
h
V
V
CBO
EBO
FE
(BR)CEO
(BR)CBO
(BR)EBO
CEsat
BEsat
SMBT2907A/MMBT2907A
min.
100
100
100
75
50
60
60
5
-
-
-
-
-
-
-
Values
typ.
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
max.
0.01
300
0.4
1.6
1.3
2.6
10
10
2007-04-26
-
-
-
-
-
-
-
Unit
V
µA
nA
-
V