MMBTA 42 LT1 Infineon Technologies, MMBTA 42 LT1 Datasheet - Page 3

• Manufacturer Part Number: MMBTA 42 LT1
• Description: TRANSISTOR NPN 300V SOT-23
• Manufacturer: Infineon Technologies

Specifications of MMBTA 42 LT1

• Package / Case: SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
• Transistor Type: NPN
• Current - Collector (ic) (max): 500mA
• Voltage - Collector Emitter Breakdown (max): 300V
• Vce Saturation (max) @ Ib, Ic: 500mV @ 2mA, 20mA
• Dc Current Gain (hfe) (min) @ Ic, Vce: 40 @ 30mA, 10V
• Power - Max: 360mW
• Frequency - Transition: 70MHz
• Mounting Type: Surface Mount
• Dc Collector/base Gain Hfe Min: 25 at 1 mA at 10 V
• Configuration: Single
• Transistor Polarity: NPN
• Mounting Style: SMD/SMT
• Collector- Emitter Voltage Vceo Max: 300 V
• Emitter- Base Voltage Vebo: 6 V
• Maximum Dc Collector Current: 0.5 A
• Power Dissipation: 360 mW
• Maximum Operating Frequency: 70 MHz
• Maximum Operating Temperature: + 150 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Current - Collector Cutoff (max): -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: MMBTA 42 LT1; MMBTA42LT1INTR; MMBTA42LT1XT; SP000010999

DC current gain h
V
h
Collector current I
V
C
FE
CE
CE
10
mA
10
10
10
10
= 10 V
= 10V
10
10
10
10
5
5
5
5
5
5
-1
3
2
1
0
10
3
2
1
0
0
SMBTA 42/43
SMBTA 42/43
-1
5
10
0
0.5
FE
C
= ( V
5
=
10
( I
1
BE
C
)
)
1.0
5
10
V
C
2
BE
EHP00844
EHP00843
mA
V
10
1.5
3
3
Operating range I
T
Collector cutoff current I
V
C
CBO
A
CBO
mA
10
10
10
10
10
= 25°C, D = 0
10
5
5
5
nA
10
10
10
10
10
-1
3
2
1
0
5
5
5
5
-1
10
= 160 V
4
3
2
1
0
SMBTA 42/43
0
SMBTA 42/43
0
5
SMBTA42/MMBTA42
10
50
C
1
=
( V
5
CBO
CEO
max
10
100
)
DC
=
2
2007-04-19
V
T
typ
CEO
A
( T
V
EHP00841
100
1
10
100
500
EHP00842
A
ms
5
)
C
ms
ms
s
s
10
150
3