BCV 26 E6327 Infineon Technologies, BCV 26 E6327 Datasheet - Page 6
![no-image](/images/manufacturer_photos/0/3/327/infineon_technologies_sml.jpg)
BCV 26 E6327
Manufacturer Part Number
BCV 26 E6327
Description
TRANSISTOR DARL PNP AF SOT-23
Manufacturer
Infineon Technologies
Datasheet
1.BCV46E6327.pdf
(8 pages)
Specifications of BCV 26 E6327
Package / Case
SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
Transistor Type
PNP - Darlington
Current - Collector (ic) (max)
500mA
Voltage - Collector Emitter Breakdown (max)
30V
Vce Saturation (max) @ Ib, Ic
1V @ 100µA, 100mA
Dc Current Gain (hfe) (min) @ Ic, Vce
20000 @ 100mA, 5V
Power - Max
360mW
Frequency - Transition
200MHz
Mounting Type
Surface Mount
Configuration
Single
Transistor Polarity
PNP
Mounting Style
SMD/SMT
Collector- Emitter Voltage Vceo Max
30 V
Emitter- Base Voltage Vebo
10 V
Collector- Base Voltage Vcbo
40 V
Maximum Dc Collector Current
0.5 A
Maximum Collector Cut-off Current
0.1 uA
Maximum Operating Temperature
+ 150 C
Dc Collector/base Gain Hfe Min
4000
Minimum Operating Temperature
- 65 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Current - Collector Cutoff (max)
-
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
Other names
BCV26E6327XT
SP000010874
SP000010874
Transition frequency f
V
Total power dissipation P
f
T
CE
mW
MHz
10
10
10
400
300
250
200
150
100
= 5 V
5
50
10
0
3
2
1
0
BCV 26/46
0
15
30
45
10
1
60
T
75
=
90 105 120
tot
10
(I
= (T
C
2
)
mA
S
EHP00294
C
)
T
°C
S
10
150
3
6
Collector-base capacitance C
Emitter-base capacitance C
Permissible Pulse Load
P
P
P
tot max
tot
totmax
DC
pF
16
12
10
10
10
10
10
8
6
4
2
0
5
5
5
0
/P
10
3
2
1
0
BCV 26/46
totDC
-6
10
4
=
-5
10
(t
8
p
CEB
D
-4
)
=
T
t
10
p
12
BCV26, BCV46
-3
t
p
eb
10
T
16
-2
cb
2007-04-20
= (V
D =
0
0.005
0.01
0.02
0.05
0.1
0.2
0.5
= (V
t
s
p
V
EHP00292
V
EB
CB
CCB
CB
)
(V
10
22
)
EB
0
)