BF 517 E6327 Infineon Technologies, BF 517 E6327 Datasheet
首页 Discrete Semiconductor Products Transistors (BJT) - Single BF 517 E6327
Manufacturer Part Number
BF 517 E6327
Description
TRANSISTOR RF NPN 15V SOT-23
Manufacturer
Infineon Technologies
Specifications of BF 517 E6327
Package / Case
SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
Transistor Type
NPN
Current - Collector (ic) (max)
25mA
Voltage - Collector Emitter Breakdown (max)
15V
Vce Saturation (max) @ Ib, Ic
400mV @ 1mA, 10mA
Dc Current Gain (hfe) (min) @ Ic, Vce
40 @ 2mA, 1V
Power - Max
280mW
Frequency - Transition
2.5GHz
Mounting Type
Surface Mount
Configuration
Single
Transistor Polarity
NPN
Mounting Style
SMD/SMT
Maximum Operating Frequency
2.5 GHz
Collector- Emitter Voltage Vceo Max
15 V
Continuous Collector Current
0.025 A
Power Dissipation
280 mW
Maximum Operating Temperature
+ 150 C
Minimum Operating Temperature
- 65 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Current - Collector Cutoff (max)
-
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
BF517E6327XT SP000010958
NPN Silicon RF Transistor
ESD (Electrostatic discharge) sensitive device, observe handling precaution!
Type
BF517
Maximum Ratings
Parameter
Collector-emitter voltage
Collector-base voltage
Emitter-base voltage
Collector current
Peak collector current
Total power dissipation
T
Junction temperature
Ambient temperature
Storage temperature
Thermal Resistance
Parameter
Junction - soldering point
1
2
3
Pb-containing package may be available upon special request
T S is measured on the collector lead at the soldering point to the pcb
For calculation of R
S
For amplifier and oscillator
Pb-free (RoHS compliant) package
Qualified according AEC Q101
applications in TV-tuners
55 °C
thJA
please refer to Application Note Thermal Resistance
2)
3)
Marking
LRs
1)
1 = B
1
Symbol
V
V
V
I
I
P
T
T
T
Symbol
R
Pin Configuration
C
CM
CEO
CBO
EBO
tot
j
A
stg
thJS
2 = E
3
3 = C
-65 ... 150
-65 ... 150
Value
Value
280
150
2.5
15
25
25
50
340
Package
SOT23
2007-04-20
1
BF517
Unit
V
mA
mW
°C
Unit
K/W
2
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BF 517 E6327 Summary of contents
NPN Silicon RF Transistor For amplifier and oscillator applications in TV-tuners Pb-free (RoHS compliant) package Qualified according AEC Q101 ESD (Electrostatic discharge) sensitive device, observe handling precaution! Type BF517 Maximum Ratings Parameter Collector-emitter voltage Collector-base voltage Emitter-base voltage Collector current ...
Electrical Characteristics at T Parameter DC Characteristics Collector-emitter breakdown voltage mA Collector-base cutoff current ...
Electrical Characteristics at T Parameter AC Characteristics (verified by random sampling) Transition frequency mA 200 MHz mA 200 MHz C ...
Total power dissipation P 320 mW 240 200 160 120 Permissible Pulse Load totmax totDC 0.005 0.01 0.02 0.05 ...
Transition frequency parameter CE 3 GHz 2 1 10V 0. BF517 2007-04-20 ...
Package Outline Foot Print Marking Layout (Example) Standard Packing Reel ø180 mm = 3.000 Pieces/Reel Reel ø330 mm = 10.000 Pieces/Reel Pin 1 Package SOT23 2.9 ±0 +0.1 0.4 -0.05 C 0.95 1.9 0.25 B ...
... For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies failure of such components can reasonably be expected to cause the failure of that life-support device or system affect the safety or effectiveness of that device or system ...
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