BCX 68-10 E6327 Infineon Technologies, BCX 68-10 E6327 Datasheet - Page 2
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BCX 68-10 E6327
Manufacturer Part Number
BCX 68-10 E6327
Description
TRANSISTOR NPN AF 20V SOT-89
Manufacturer
Infineon Technologies
Datasheet
1.BCX_68-25_E6327.pdf
(7 pages)
Specifications of BCX 68-10 E6327
Transistor Type
NPN
Current - Collector (ic) (max)
1A
Voltage - Collector Emitter Breakdown (max)
20V
Vce Saturation (max) @ Ib, Ic
500mV @ 100mA, 1A
Dc Current Gain (hfe) (min) @ Ic, Vce
85 @ 500mA, 1V
Power - Max
3W
Frequency - Transition
100MHz
Mounting Type
Surface Mount
Package / Case
SOT-89
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Current - Collector Cutoff (max)
-
Other names
BCX6810E6327XT
SP000010924
SP000010924
Electrical Characteristics at T
Parameter
DC Characteristics
Collector-emitter breakdown voltage
I
Collector-base breakdown voltage
I
Emitter-base breakdown voltage
I
Collector-base cutoff current
V
V
DC current gain
I
I
I
I
I
Collector-emitter saturation voltage
I
Base-emitter voltage
I
I
AC Characteristics
Transition frequency
I
1
C
C
E
C
C
C
C
C
C
C
C
C
Pulse test: t < 300µs; D < 2%
CB
CB
= 1 µA, I
= 30 mA, I
= 10 µA, I
= 5 mA, V
= 500 mA, V
= 500 mA, V
= 500 mA, V
= 1 A, V
= 1 A, I
= 5 mA, V
= 1 A, V
= 100 mA, V
= 25 V, I
= 25 V, I
B
CE
CE
C
= 100 mA
E
CE
CE
B
= 0
E
E
= 1 V
= 1 V
= 0
= 0
= 0
= 0 , T
CE
CE
CE
CE
1)
= 10 V
= 10 V
= 1 V, BCX68-10
= 1 V, BCX68-16
= 1 V, BCX68-25
= 5 V, f = 20 MHz
1)
A
= 150 °C
A
= 25°C, unless otherwise specified
1)
2
f
Symbol
V
V
V
I
h
V
V
T
CBO
FE
(BR)CEO
(BR)CBO
(BR)EBO
CEsat
BE(ON)
min.
100
160
50
85
60
20
25
5
-
-
-
-
-
-
Values
100
160
250
typ.
100
0.6
-
-
-
-
-
-
-
-
-
max.
100
160
250
375
0.1
0.5
1
2008-10-10
-
-
-
-
-
-
-
BCX68...
MHz
Unit
V
µA
-
V