BFN 18 E6327 Infineon Technologies, BFN 18 E6327 Datasheet - Page 9

• Manufacturer Part Number: BFN 18 E6327
• Description: TRANSISTOR RF NPN 300V SOT-89
• Manufacturer: Infineon Technologies

Specifications of BFN 18 E6327

• Package / Case: SOT-89
• Transistor Type: NPN
• Current - Collector (ic) (max): 200mA
• Voltage - Collector Emitter Breakdown (max): 300V
• Vce Saturation (max) @ Ib, Ic: 500mV @ 2mA, 20mA
• Dc Current Gain (hfe) (min) @ Ic, Vce: 30 @ 30mA, 10V
• Power - Max: 1W
• Frequency - Transition: 70MHz
• Mounting Type: Surface Mount
• Configuration: Single
• Transistor Polarity: NPN
• Mounting Style: SMD/SMT
• Maximum Operating Frequency: 70 MHz
• Collector- Emitter Voltage Vceo Max: 300 V
• Continuous Collector Current: 0.2 A
• Power Dissipation: 1 W
• Maximum Operating Temperature: + 150 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Current - Collector Cutoff (max): -
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: BFN18E6327XT; SP000010997

Transition Frequency
f
Total Power Dissipation
P
Data Sheet
T
tot
=
=
f
(
f
I
f
T
C
(
MHz
1.8
1.6
1.4
1.2
0.8
0.6
0.4
0.2
T
),
10
10
10
2
1
0
S
5
V
0
)
3
2
1
10
CE
BFN 16/18
0
= 10 V
5
50
10
1
Ts [°C]
5
10
100
2
Ι
mA
C
EHP00583
5
10
3
150
9
Collector Base Capacitance
Emitter Base Capacitance
Permissible Pulse Load
P
totmax
P
P
tot max
tot
DC
/
90
80
70
60
50
40
30
20
10
0
P
0
10
10
10
10
totDC
5
5
5
3
2
1
0
10
BFN 16/18
-6
=
f
5
10
(
T
Ceb
-5
S
)
10
Vcb, Veb [V]
10
D
-4
Characteristic DC Diagrams
=
t
T
C
10
p
eb
Revision 1.0, 2010-10-13
C
-3
cb
=
15
t
p
f
10
=
(
V
T
f
-2
(
D =
0
0.005
0.01
0.02
0.05
0.1
0.2
0.5
EB
V
CB
)
t
20
s
p
EHP00581
)
Ccb
10
BFN18
0
25