BFN 19 E6327 Infineon Technologies, BFN 19 E6327 Datasheet - Page 3

• Manufacturer Part Number: BFN 19 E6327
• Description: TRANSISTOR RF PNP 300V SOT-89
• Manufacturer: Infineon Technologies

Specifications of BFN 19 E6327

• Package / Case: SOT-89
• Transistor Type: PNP
• Current - Collector (ic) (max): 200mA
• Voltage - Collector Emitter Breakdown (max): 300V
• Vce Saturation (max) @ Ib, Ic: 500mV @ 2mA, 20mA
• Dc Current Gain (hfe) (min) @ Ic, Vce: 30 @ 30mA, 10V
• Power - Max: 1W
• Frequency - Transition: 100MHz
• Mounting Type: Surface Mount
• Configuration: Single
• Transistor Polarity: PNP
• Mounting Style: SMD/SMT
• Maximum Operating Frequency: 100 MHz
• Collector- Emitter Voltage Vceo Max: 300 V
• Continuous Collector Current: 0.2 A
• Power Dissipation: 1 W
• Maximum Operating Temperature: + 150 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Current - Collector Cutoff (max): -
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: BFN19E6327XT; SP000010998

DC current gain h
V
Collector current I
V
h
C
CE
CE
FE
mA
10
10
10
10
10
10
10
10
10
5
5
5
= 10 V
= 10V
5
5
2
5
-1
3
2
1
0
3
2
1
0
10
0
BFN 17/19
BFN 17/19
-1
5
10
0
0.5
FE
C
5
= ( V
=
10
1
( I
BE
C
)
)
1.0
5
10
V
C
2
BE
EHP00592
EHP00589
mA
V
10
1.5
3
3
Operating range I
T
Collector cutoff current I
V
C
CBO
A
CBO
mA
10
= 25°C, D = 0
10
10
10
10
nA
10
10
10
10
10
10
5
5
5
-1
5
5
5
5
3
2
1
0
10
-1
= 200 V
4
3
2
1
0
BFN 17/19
0
BFN 17/19
0
5
10
50
C
1
=
( V
5
CBO
max
CEO
100
10
DC
)
=
2
2007-03-29
V
T
typ
CEO
A
V
( T
˚C
BFN19
EHP00587
100
100
1
EHP00591
10
A
ms
5
)
ms
s
s
150
10
3