BCP 49 E6327 Infineon Technologies, BCP 49 E6327 Datasheet - Page 4

• Manufacturer Part Number: BCP 49 E6327
• Description: TRANSISTOR DARL NPN AF SOT-223
• Manufacturer: Infineon Technologies

Specifications of BCP 49 E6327

• Package / Case: SOT-223 (3 leads + Tab), SC-73, TO-261
• Transistor Type: NPN - Darlington
• Current - Collector (ic) (max): 500mA
• Voltage - Collector Emitter Breakdown (max): 60V
• Vce Saturation (max) @ Ib, Ic: 1V @ 100µA, 100mA
• Dc Current Gain (hfe) (min) @ Ic, Vce: 10000 @ 100mA, 5V
• Power - Max: 1.5W
• Frequency - Transition: 200MHz
• Mounting Type: Surface Mount
• Configuration: Single Dual Collector
• Transistor Polarity: NPN
• Mounting Style: SMD/SMT
• Collector- Emitter Voltage Vceo Max: 60 V
• Emitter- Base Voltage Vebo: 10 V
• Collector- Base Voltage Vcbo: 80 V
• Maximum Dc Collector Current: 0.5 A
• Maximum Collector Cut-off Current: 0.1 uA
• Maximum Operating Temperature: + 150 C
• Dc Collector/base Gain Hfe Min: 2000
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Current - Collector Cutoff (max): -
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: BCP49E6327XT; SP000010685

Total power dissipation P
Transition frequency f
V
f
T
CE
MHz
mW
1650
1350
1200
1050
10
10
10
900
750
600
450
300
150
5
= 5V
10
3
2
1
0
0
BCP 29/49
0
15
30
45
10
1
60
T
75
= f (I
90 105 120
tot
10
C
= f(T
2
)
mA
S
EHP00252
C
)
T
°C
S
10
150
3
4
Collector cutoff current I
V
Permissible pulse load
P
P
P
CBO
tot max
tot
CB
totmax
DC
nA
10
10
10
10
10
= V
10
10
10
10
5
5
5
4
3
2
1
0
10
0
3
2
1
0
/ P
BCP 29/49
CEmax
BCP 29/49
-6
totDC
10
-5
= f (t
50
10
p
-4
D
)
=
t
T
10
max
p
-3
CBO
typ
t
100
p
10
= f (T
-2
T
2007-04-27
D =
0
0.005
0.01
0.02
0.05
0.1
0.2
0.5
T
A
˚C
BCP49
t
EHP00251
s
p
A
EHP00253
)
150
10
0